Dielectric Composition with Ba-Mg-Si-O Grains for Thermal Shock Resistance
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Solution Overview
Problem
Conventional dielectric compositions used in electronic components are prone to cracking due to thermal shock during processes like flow soldering, which affects their reliability and performance.
Innovation Solution
A dielectric composition that includes main phase grains and segregation grains, where the segregation grains are predominantly Ba—Mg—Si—O grains, which effectively prevent or mitigate cracks by controlling grain growth and providing thermal shock resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If flow soldering is used to mount the electronic component, then cost is reduced, but cracks may be generated in the dielectric composition due to thermal shock
Solution Approach 1:
The patent uses a composite dielectric material consisting of a main phase (barium titanate-based ceramic) and a secondary phase (Ba-Mg-Si-O segregation grains). This composite structure combines the high dielectric properties of the main phase with the crack-resistant characteristics of the secondary phase, enabling the material to withstand thermal shock from flow soldering while maintaining electrical performance
Solution Approach 2:
The patent modifies the chemical composition parameters of the dielectric material by introducing specific ratios of Ba, Mg, and Si elements that form the Ba-Mg-Si-O segregation grains. By controlling the composition parameters (specifically making Ba, Mg, and Si constitute 70 parts by mol or more out of 100 parts by mol of total metal elements and Si), the material achieves enhanced thermal shock resistance suitable for low-cost flow soldering processes
2Strength
If Ba—Mg—Si—O segregation grains are made finer to increase surface area, then grain boundary movement is better prevented, but thermal conductivity may be reduced due to increased surface energy
Solution Approach 1:
The patent optimizes the size parameter of the Ba-Mg-Si-O segregation grains, specifying an average grain size of 0.1 μm or less. This parameter control achieves a balance where the grains are fine enough to effectively pin grain boundaries and prevent excessive main phase grain growth, yet not so fine as to completely block thermal conduction paths between main phase grains
Solution Approach 2:
The patent creates local quality differences by positioning Ba-Mg-Si-O segregation grains specifically at grain boundaries between main phase grains. This localized placement allows the segregation grains to exert their grain-boundary-pinning effect precisely where needed, while maintaining adequate thermal conductivity through the bulk material by not over-constraining the structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric composition with Ba—Mg—Si—O segregation grains significantly reduces the likelihood of cracking under thermal shock, maintains high relative permittivity, and enhances thermal conductivity, thereby improving the reliability and performance of electronic components.
Implementation Method 1
the Ba—Mg—Si—O segregation grains prevent or mitigate excessive grain growth of the main phase grains
Implementation Method 2
even if cracks are generated in the dielectric composition, progression of the cracks are stopped when the cracks reach the Ba—Mg—Si—O segregation grains
Implementation Method 3
making the Ba—Mg—Si—O segregation grains finer to increase their surface area can increase surface energy, even a small amount of the Ba—Mg—Si—O segregation grains can efficiently prevent or mitigate movement of the grain boundary
Implementation Method 4
the Ba—Mg—Si—O segregation grains do not completely block a space between the main phase grains. Thus, thermal conductivity between the main phase grains is readily ensured, and thermal conductivity of the dielectric composition as a whole is increased, which makes the dielectric composition thermal shock resistant
Data Source
AI summary
A dielectric composition includes main phase grains and segregation grains. The segregation grains at least partly include Ba—Mg—Si—O segregation grains including Ba, Mg, Si, and O. Ba, Mg, and Si in the Ba—Mg—Si—O segregation grains constitute 70 parts by mol or more in total out of 100 parts by mol of a total of metal elements and Si in the Ba—Mg—Si—O segregation grains.