Dielectric Connector Protector for MEMS Over-Etching

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Solution Overview

Problem

During the manufacturing of microelectromechanical system (MEMS) devices, the anchors or connectors are often damaged due to over-etching, leading to unsatisfactory performance and reliability of the electromechanical devices.

Innovation Solution

The implementation of a dielectric material-based connector and protector structure, where the connector is positioned between substrates and protected by dielectric material protectors, including through-hole protectors, to prevent damage during the manufacturing process, ensuring effective anchoring and reliable performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional connector structures are used during manufacturing, then device complexity is reduced, but the connectors are damaged due to over-etching, leading to poor reliability

Engineering Contradiction:
Improveconnector reliabilityVSAvoiddevice complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

A dielectric protector is introduced as an intermediary element between the connector and the etching environment. This protector acts as a shield that prevents the etching solution from directly contacting and damaging the connector, thereby resolving the contradiction by adding a protective layer that improves reliability while maintaining manageable device complexity

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The dielectric protector is formed before the connector structure is fully processed. This preliminary action ensures that the protector is already in place to prevent over-etching damage during subsequent manufacturing steps, addressing the reliability issue by proactively protecting the connector before damage can occur

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If connector protection structures are added, then connector protection from over-etching is improved, but the manufacturing process becomes more complex

Engineering Contradiction:
Improveconnector protection precisionVSAvoidmanufacturing process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The dielectric protector formation process is merged with existing manufacturing processes. The protector is formed using standard dielectric deposition and patterning techniques that are already part of the fabrication workflow, thereby improving manufacturing precision for connector protection without significantly increasing overall process complexity

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The dielectric protector is applied locally only where connector protection is needed, rather than uniformly across the entire device. This localized approach improves manufacturing precision by providing targeted protection while minimizing the added complexity to the overall manufacturing process

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10280078B2Electromechanical device including connector formed of dielectric material
Publication Date: 2019.05.07 SEMICON MFG INT (SHANGHAI) CORP
  • US10280078B2 patent drawing
  • US10280078B2 patent drawing
  • US10280078B2 patent drawing

AI summary

An electromechanical device may include a first substrate, a second substrate, a connector, and a protector. The connector may be formed of a first dielectric material and may be positioned between the first substrate and the second substrate. A first side of the connector may directly contact the first substrate. The protector may be formed of a second dielectric material and may directly contact a second side of the connector.