Dielectric Film Corner Removal to Prevent Electrode Interface Peeling
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Solution Overview
Problem
Inorganic insulating materials like silicon nitride used in electronic components with capacitors exhibit high stress, leading to peeling issues at the interface between the lower electrode and the dielectric film, which affects reliability and capacitance values.
Innovation Solution
The electronic component design involves removing a part of the dielectric film parallel to the substrate's main surface, thereby relaxing stress and preventing peeling at the interface between the lower electrode and the dielectric film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the dielectric film covers the entire surface of the substrate including corner portions, then the capacitor structure is complete and capacitance is formed, but stress concentration occurs at the corner portions causing peeling at the interface between the lower electrode and the dielectric film
Solution Approach 1:
The patent removes the dielectric film from the corner portions of the lower electrode, extracting the harmful stress-concentrating regions while preserving the functional capacitor structure. This selective removal eliminates the source of peeling initiation at corners where the dielectric film would otherwise cover the entire surface including terminal edges.
Solution Approach 2:
The dielectric film coverage is made non-uniform by removing it specifically from corner portions while maintaining coverage on the top and side surfaces of the lower electrode. This local modification addresses stress concentration at corners without compromising the overall capacitor functionality, creating different dielectric film presence conditions in different spatial regions.
2Manufacturing precision
If the dielectric film is formed over the entire substrate surface, then complete insulation and capacitance structure are achieved, but peeling occurs at the interface which causes capacitance deviation from designed values
Solution Approach 1:
By removing the dielectric film from corner portions, the patent eliminates the peeling phenomenon that would otherwise cause capacitance deviation. This extraction of the problematic dielectric film regions prevents interface degradation and maintains capacitance values close to designed specifications.
Solution Approach 2:
The dielectric film is removed from corner portions before the peeling process can initiate and propagate. This preliminary removal prevents the harmful peeling effect from occurring in the first place, thereby maintaining both reliability and capacitance precision without requiring post-manufacturing corrections.
3Stability of the object's composition
If the dielectric film covers the corner portions of the lower electrode, then the capacitor structure is complete, but stress relaxation is insufficient leading to peeling propagation from corner portions
Solution Approach 1:
The dielectric film is extracted from corner portions where stress concentration occurs, directly reducing the total stress in the dielectric film structure. This removal targets the specific regions where stress would otherwise accumulate and initiate peeling, while maintaining adequate coverage for electrical functionality.
Solution Approach 2:
The dielectric film coverage is modified locally at corner portions to reduce stress concentration, while maintaining complete coverage on functional surfaces. This creates a non-uniform stress distribution that is optimized for reliability, with lower stress at corners and adequate insulation where required.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents peeling at the interface, enhancing the reliability of the electronic component and maintaining the designed capacitance value.
Implementation Method 1
a dielectric film that covers at least the top and side surfaces of the lower electrode
Implementation Method 2
an upper electrode stacked on the top surface of the lower electrode through the dielectric film
Data Source
AI summary
An electronic component includes: a conductive pattern provided on the main surface of a substrate and constituting a lower electrode; a dielectric film that covers top and side surfaces of the conductive pattern; and a conductive pattern stacked on the top surface of the conductive pattern through the dielectric film and constituting an upper electrode. A part of the dielectric film that is parallel to the main surface of the substrate is removed at least partly. Partially removing a part of the dielectric film that is parallel to the main surface of the substrate allows stress relaxation. This prevents peeling at the interface between the lower electrode and the dielectric film.


