Dielectric Dummy Gate for Semiconductor Device Parasitic Capacitance
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Solution Overview
Problem
The miniaturization of integrated circuits has led to challenges in reducing power consumption and improving performance due to issues with gate dielectric breakdown and parasitic capacitance, particularly when conductive dummy gates are used, which can increase power consumption and reduce reliability.
Innovation Solution
The use of dielectric dummy gates alongside gate electrodes creates a fully dense gate environment, facilitating epitaxial growth of source/drain regions, reducing capacitance, and minimizing the risk of gate dielectric breakdown, thereby enhancing performance and reliability while maintaining reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive dummy gates are used to create a dense gate environment, then epitaxial growth of source/drain regions is facilitated, but parasitic capacitance increases and power consumption increases
Solution Approach 1:
The patent changes the electrical parameter of the dummy gate from conductive to dielectric, fundamentally altering its electrical properties. This parameter change eliminates parasitic capacitance while preserving the geometric structure needed for epitaxial growth, thus reducing power consumption without sacrificing growth quality
Solution Approach 2:
The dielectric dummy gate serves as a temporary structure that facilitates epitaxial growth during manufacturing but does not need to remain conductive in the final device. By using a dielectric material instead of conductive material, the dummy gate achieves its structural purpose without creating harmful electrical effects in the operational device
2Reliability
If conductive dummy gates are used to create a dense gate environment, then epitaxial growth of source/drain regions is facilitated, but gate dielectric breakdown risk increases
Solution Approach 1:
The patent changes the electrical parameter of the dummy gate from conductive to dielectric, fundamentally altering its electrical properties. This parameter change eliminates parasitic capacitance while preserving the geometric structure needed for epitaxial growth, thus reducing power consumption without sacrificing growth quality
Solution Approach 2:
The patent converts the potentially harmful effect of high electric fields near conductive dummy gates into a beneficial situation by using dielectric materials. The dielectric dummy gate creates the necessary geometric structure for growth while eliminating the harmful electric field concentration that would cause dielectric breakdown
3Area of moving object
If circuit miniaturization is pursued to reduce power consumption, then device size decreases, but gate dielectric breakdown and parasitic capacitance issues worsen
Solution Approach 1:
The patent changes the electrical parameter of the dummy gate from conductive to dielectric, fundamentally altering its electrical properties. This parameter change eliminates parasitic capacitance while preserving the geometric structure needed for epitaxial growth, thus reducing power consumption without sacrificing growth quality
Solution Approach 2:
The patent applies different material properties to different regions: dielectric material is used specifically for dummy gates in miniaturized regions where electric field effects are most problematic, while conductive materials can be used elsewhere. This local differentiation allows miniaturization to proceed without compromising reliability in critical areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in improved circuit density, performance, and reduced power consumption without additional cost or area penalties, by forming dielectric dummy gates that reduce parasitic capacitance and enhance epitaxial growth, thus addressing the limitations of conductive dummy gates.
Implementation Method 1
The use of dielectric dummy gates alongside gate electrodes creates a fully dense gate environment, facilitating epitaxial growth of source/drain regions, reducing capacitance
Implementation Method 2
The use of dielectric dummy gates alongside gate electrodes creates a fully dense gate environment, facilitating epitaxial growth of source/drain regions
Data Source
AI summary
A method of manufacturing a semiconductor device includes removing a first gate among a plurality of gates over a substrate. Removing the first gate exposes a first portion of an active area region under the first gate. The method further includes forming a first dielectric dummy gate over the exposed first portion of the active area region. The method further includes removing a second gate among the plurality of gates, wherein removing the second gate exposes a second portion of the active area region. The method further includes depositing a first gate electrode over the exposed second portion of the active area region.