Semiconductor device and method for fabricating the same
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Solution Overview
Problem
The increased integration of semiconductor devices leads to smaller spacing between patterns, causing damage to the substrate surface, resulting in dangling bonds that increase electron leakage current and degrade transistor performance.
Innovation Solution
A semiconductor device with a dielectric structure featuring alternately stacked etch stop structures and low-k layers, including a first etch stop layer with a hydrogen blocking material, prevents hydrogen diffusion during annealing processes, maintaining low dielectric constant and enhancing hydrogen diffusion efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If etching process is performed to create patterns, then device integration is achieved, but substrate surface damage increases causing dangling bonds that increase leakage current
Solution Approach 1:
A hydrogen blocking layer is introduced as an intermediary component between the substrate and the gate dielectric layer. This layer prevents hydrogen diffusion to dangling bonds on the substrate surface, thereby reducing leakage current while maintaining the benefits of high device integration achieved through etching processes.
Solution Approach 2:
The harmful effect of hydrogen diffusion to substrate surface dangling bonds is extracted and blocked by the hydrogen blocking layer. This separates the etching process benefits from its harmful side effect, allowing high integration while preventing leakage current increase.
2Reliability
If hydrogen blocking layer is added to prevent hydrogen diffusion, then leakage current is reduced, but device structure becomes more complex
Solution Approach 1:
The dielectric structure is segmented into multiple functional layers including the hydrogen blocking layer, etch stop layer, and gate dielectric layer. This segmentation allows each layer to perform its specific function efficiently, with the hydrogen blocking layer specifically targeting leakage current reduction without requiring complete restructuring of the device.
3Reliability
If multiple etch stop layers are used to control hydrogen diffusion, then hydrogen diffusion efficiency is enhanced, but manufacturing process becomes more complex
Solution Approach 1:
Different layers are assigned specific local qualities: the first etch stop layer (silicon nitride) provides hydrogen blocking, while the second etch stop layer (silicon oxide) provides etch selectivity and structural support. This local differentiation optimizes hydrogen diffusion control without requiring all layers to perform all functions, simplifying the overall manufacturing approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces substrate damage, decreases leakage current, and improves electrical characteristics and reliability by blocking hydrogen diffusion and maintaining low dielectric constant, thus enhancing the efficiency of hydrogen transfer.
Implementation Method 1
each one of the etch stop structures includes: a first etch stop layer including a hydrogen blocking material
Implementation Method 2
enhancing the efficiency of hydrogen transfer
Data Source
AI summary
A semiconductor device includes: a dielectric structure in which etch stop structures and low-k layers are alternately stacked over a substrate; and a metal interconnection electrically connected to the substrate in the dielectric structure, wherein each one of the etch stop structures includes: a first etch stop layer including a hydrogen blocking material; and a second etch stop layer formed over the first etch stop layer.