Selective Dielectric Etching Using Loss-Tangent Frequency Heating
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Solution Overview
Problem
The challenge in selective etching of semiconductor structures is achieving high etching selectivity to remove a selected element while preserving the integrity of the remaining elements, which existing methods have not adequately addressed.
Innovation Solution
Applying an alternating electric field with a selected frequency to selectively heat the dielectric material in the semiconductor structure, utilizing the material's maximum loss tangent frequency to achieve selective heating and enhance etching efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective etching methods are used to remove a selected element, then the selected element can be removed, but the etching selectivity is insufficient and remaining elements may be damaged
Solution Approach 1:
The patent applies electromagnetic radiation with a selected frequency to selectively heat the dielectric material based on its loss tangent properties. By changing the physical parameter (frequency of electromagnetic radiation) to match the maximum loss tangent frequency of the dielectric material, the etching process achieves high selectivity without requiring complex multi-step conventional etching procedures
Solution Approach 2:
The patent replaces conventional mechanical/chemical etching methods with an electromagnetic field-based heating approach. Instead of using complex chemical etchants and multiple processing steps, the invention uses electromagnetic radiation to selectively heat and remove the dielectric material, simplifying the overall manufacturing process while improving selectivity
2Productivity
If higher etching rate is achieved to improve productivity, then more material is removed faster, but selectivity decreases and damage to surrounding elements increases
Solution Approach 1:
The patent changes the physical state of the dielectric material by selectively heating it to a temperature where the etching reaction rate is dramatically enhanced. By controlling the electromagnetic radiation frequency to match the maximum loss tangent frequency, the dielectric material reaches optimal heating conditions that accelerate etching while maintaining high selectivity against other materials
Solution Approach 2:
The patent employs periodic application of electromagnetic radiation at a specific frequency that corresponds to the maximum loss tangent of the dielectric material. This periodic energy input creates oscillating heating effects that enhance the etching rate while the selective nature of the frequency-based heating ensures that only the target dielectric material is affected, not surrounding elements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method allows for the selective removal of the predetermined part of the selected dielectric element at a higher rate by increasing the kinetic energy and reaction rate, ensuring minimal damage to the surrounding elements.
Implementation Method 1
applying an alternating electric field with a selected frequency to a semiconductor structure such that a selected element of the semiconductor structure is selectively heated by the alternating electric field to have a temperature higher than those of other elements of the semiconductor structure. The selected element has a loss tangent which is greater than a loss tangent of each of the other elements at the selected frequency
Implementation Method 2
introducing a removing agent into the chamber while applying an electromagnetic radiation with a selected frequency to the chamber so as to permit the dielectric material to be selectively heated... so as to permit the modified surface part of the lateral dielectric regions to be removed using the removing agent
Data Source
AI summary
A method for treating a semiconductor structure includes: disposing the semiconductor structure in a chamber; introducing a modifying agent into the chamber to modify a surface part of a dielectric element; and introducing a removing agent into the chamber while applying an electromagnetic radiation with a selected frequency to the chamber so as to permit the dielectric element to be selectively heated by the electromagnetic radiation to have a temperature higher than those of other elements of the semiconductor structure, and so as to permit the modified surface part of the dielectric element to be removed.