Dielectric Fin Gate Segmentation for Multi-Gate Channel Control
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Solution Overview
Problem
The integration of multi-gate devices in semiconductor manufacturing is challenging due to increased complexity and the need for advanced processes to improve gate control and reduce short-channel effects.
Innovation Solution
The semiconductor structure incorporates a dielectric fin structure with a core portion and connecting portions, which are used to separate the gate structure into portions, reducing the size of the device and improving gate control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-gate devices are integrated to improve gate control and reduce short-channel effects, then device performance is improved, but manufacturing complexity increases
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate and second gate) that are positioned on opposite sides of the channel. This segmentation enables improved gate control and reduction of short-channel effects while maintaining manufacturability through a structured fabrication process
Solution Approach 2:
Different regions of the device are given different properties: the channel region has a first semiconductor material, source/drain regions have second semiconductor material, and isolation regions have dielectric material. This local differentiation optimizes performance while providing clear fabrication guidance
2Productivity
If device dimensions are scaled down to improve production efficiency and lower costs, then productivity is improved, but manufacturing complexity increases
Solution Approach 1:
The device is divided into distinct functional segments (source, channel, drain, gates, isolation regions) with clearly defined boundaries and material compositions, enabling systematic fabrication even at scaled dimensions
Solution Approach 2:
Isolation regions are formed beforehand to define the active device areas before subsequent gate and channel formation steps. This preliminary structuring simplifies later processing steps and maintains precision at scaled dimensions
Data Source
AI summary
Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and first channel structures and second channel structures formed over the substrate. The semiconductor structure also includes a dielectric fin structure formed between the first channel structures and the second channel structures. In addition, the dielectric fin structure includes a core portion and first connecting portions connected to the core portion. The semiconductor structure also includes a gate structure including a first portion. In addition, the first portion of the gate structure is formed around the first channel structures and covers the first connecting portions of the dielectric fin structure.