Dielectric Composition Grain Boundary Engineering for Thin Multilayer Capacitors
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Solution Overview
Problem
The demand for miniaturization and increased capacity in multilayer electronic components leads to the need for thinner dielectric layers, but this results in compromised withstand voltage characteristics and reliability due to increased voltage across the dielectric layers, making it challenging to maintain high dielectric properties.
Innovation Solution
A dielectric composition comprising a base material powder of BamTiO3 modified with calcium, zirconium, or tin, along with accessory components such as manganese, silicon, and rare earth elements, is used to create a core-shell structure in the dielectric layers, optimizing grain boundary content and thickness to enhance dielectric properties and reliability while allowing for thinning of the dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If dielectric layers are thinned to meet miniaturization demands, then device capacity and integration density are improved, but withstand voltage characteristics and reliability are deteriorated
Solution Approach 1:
The patent applies local quality by creating a core-shell structure where the grain boundary region has distinct compositional characteristics different from the grain interior. Specifically, the grain boundary contains a higher concentration of Si and Dy elements (sum of 10-15 parts by weight based on 100 parts by weight of overall oxide in grain boundary), which locally enhances insulation resistance and breakdown voltage at the critical grain boundary regions, thereby maintaining reliability even when the overall dielectric layer thickness is reduced to 500 nm or less.
Solution Approach 2:
The patent employs composite materials by combining multiple oxide components in the dielectric composition, including base material powder (BamTiO3 modified with Ca, Zr, or Sn), accessory components (Mn, Cr, Fe, Co, Cu, Zn, Mg, Si, Al, glass), and specific additions of Dy and V2O5. This composite formulation creates a multi-phase microstructure with core-shell grains that exhibit enhanced dielectric properties and withstand voltage characteristics, enabling thin dielectric layers to maintain high reliability.
2Quantity of substance
If dielectric layers are thinned to increase capacity, then device capacity is improved, but breakdown voltage is deteriorated
Solution Approach 1:
The patent enhances breakdown voltage through local quality by concentrating Si and Dy elements specifically at the grain boundary regions. This localized compositional modification creates a protective barrier at the most vulnerable points (grain boundaries) where breakdown typically initiates, allowing the dielectric layer to be thinned while maintaining high breakdown voltage characteristics.
Solution Approach 2:
The patent applies parameter changes by precisely controlling the thickness of the grain boundary region (0.7 to 1.5 nm) and the composition ratios of Si and Dy in the grain boundary (sum of 10-15 parts by weight based on 100 parts by weight of oxide). These parameter optimizations enable the dielectric layer to achieve both thinness for high capacity and sufficient breakdown voltage for reliability.
3Length of moving object
If dielectric layers are thinned to meet size requirements, then miniaturization is achieved, but insulation resistance is deteriorated
Solution Approach 1:
The patent addresses insulation resistance deterioration by implementing local quality enhancement at grain boundaries through Si and Dy segregation. The grain boundary region with elevated Si and Dy content (10-15 parts by weight sum based on 100 parts by weight of oxide) forms a localized high-resistance barrier that compensates for the reduced overall dielectric thickness, maintaining insulation resistance even when dielectric layers are thinned to 500 nm or less.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric composition effectively maintains high dielectric properties and reliability of multilayer electronic components by improving insulation resistance and breakdown voltage, even at reduced thickness, through controlled grain boundary composition and structure.
Implementation Method 1
a sum of contents of Si and Dy in a grain boundary formed between adjacent dielectric compositions is 10 to 15 parts by weight based on 100 parts by weight of an overall amount of an oxide in the grain boundary
Data Source
AI summary
A multilayer electronic component includes: a body including first and second internal electrodes alternately disposed with respective dielectric layers interposed therebetween; and first and second external electrodes disposed on the body to be connected to the first and second internal electrodes, respectively, wherein each of the dielectric layers includes BamTiO3 and includes a plurality of grains and grain boundaries formed between adjacent grains, and a sum of contents of Si and Dy in the grain boundary is 10 to 15 parts by weight.