Semiconductor Dielectric Growth Using Back-Side Heating Control
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Solution Overview
Problem
Existing methods for controlling the thickness of dielectric layers on semiconductor substrates are inefficient and require additional processes, especially in single wafer cleaners, leading to insufficient thickness and prolonged treatment times.
Innovation Solution
A method involving simultaneous contact of the front surface of a semiconductor substrate with an oxidizing solution and the back surface with a heat source to enhance the reaction rate, allowing precise control of dielectric layer thickness by varying oxidizing solution concentration and temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional cleaning methods (wet bench or SWC) are used to form dielectric layers, then the process is simple, but the dielectric layer thickness is insufficient (only 10.8 Å or 9.9 Å) and cannot be controlled in a narrow range
Solution Approach 1:
The patent applies parameter changes by controlling the concentration of oxidizing agents (H2O2, O3) and temperature in the oxidizing solution to precisely control dielectric layer thickness. By varying these parameters, the method achieves thickness control in a narrow range (5-20 Å) and can form layers up to 11 Å in 10-20 minutes, overcoming the fixed thickness limitation of conventional methods
Solution Approach 2:
The patent introduces a new dimension of control by applying heat to the back surface of the substrate while treating the front surface with oxidizing solution. This dual-sided approach (chemical treatment on front + thermal treatment on back) enables enhanced reaction rates and thicker dielectric layer formation (up to 11 Å) compared to single-sided conventional methods
2Ease of manufacture
If hot DI water treatment is used to form dielectric layers, then the process is simple, but the treatment time is very long and thickness build is nominal
Solution Approach 1:
The patent uses strong oxidants (H2O2 and O3) instead of mild hot DI water to accelerate the oxidation reaction. This enables rapid dielectric layer formation (11 Å in 10-20 minutes) compared to the very long treatment time required by hot DI water, while maintaining process simplicity through a single-step treatment
Solution Approach 2:
The patent changes the chemical composition parameters by introducing H2O2 and O3 as oxidizing agents with controlled concentrations. This accelerates the oxidation reaction rate, enabling thick dielectric layer formation (up to 11 Å) in 10-20 minutes, overcoming the slow thickness build of hot DI water treatment
3Manufacturing precision
If PECVD or RTA treatments are used to form dielectric layers, then the dielectric layer can be formed, but additional processes are required to control the thickness in a narrow range
Solution Approach 1:
The patent merges cleaning and dielectric layer formation into a single integrated oxidizing treatment step. By combining these functions and controlling oxidizing agent concentration and temperature, the method achieves narrow thickness range control (5-20 Å) without requiring separate additional processes, reducing device complexity while maintaining manufacturing precision
Solution Approach 2:
The patent uses parameter changes (oxidizing agent concentration and temperature control) to achieve precise thickness control in a single process step. This eliminates the need for multiple additional processes required by PECVD or RTA methods, reducing device complexity while maintaining narrow thickness range control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves rapid and precise growth of dielectric layers up to 11 Å in 10-20 minutes, overcoming the limitations of existing methods by providing thicker and more controlled dielectric layers.
Implementation Method 1
contacting the back surface with a heat source that facilitates increasing a reaction rate between the oxidizing agent and the front surface
Implementation Method 2
contacting the front surface with an oxidizing solution including an oxidizing agent
Data Source
AI summary
Described herein is a method of growing a dielectric layer on a surface of a single crystal semiconductor substrate. The method includes providing the single crystal semiconductor substrate, the single crystal semiconductor substrate including two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor substrate and the other of which is a back surface of the single crystal semiconductor substrate, a circumferential edge joining the front and back surfaces, and a bulk region between the front and back surfaces, contacting the front surface with an oxidizing solution including an oxidizing agent, and simultaneously, contacting the back surface with a heat source that facilitates increasing a reaction rate between the oxidizing agent and the front surface.