Dielectric Structure Heating for Uniform Plasma Film Deposition

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Solution Overview

Problem

Existing substrate processing systems face challenges in maintaining uniform film quality across multiple substrates due to variations in processing environments caused by substrate replacement, which can lead to temperature fluctuations in the process chamber.

Innovation Solution

A substrate processing apparatus equipped with a dielectric structure, electromagnetic wave supplier, and a heating medium supplier, controlled by a controller to maintain the dielectric structure's temperature within a predetermined range by supplying a heating medium when necessary, ensuring consistent plasma generation and film quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If substrate replacement is performed in the process chamber, then multiple substrates can be processed, but the processing environment varies causing temperature fluctuations and film quality variation

Engineering Contradiction:
Improvenumber of substrates processedVSAvoidfilm quality uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

A dielectric structure is introduced as an intermediary component between the electromagnetic wave supplier and the substrate. This dielectric structure has a specific heat capacity and thermal conductivity that allow it to act as a thermal buffer, absorbing and releasing heat to maintain stable plasma generation conditions during substrate replacement, thereby preventing temperature fluctuations that would otherwise cause film quality variation

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The dielectric structure's thermal properties (specific heat capacity and thermal conductivity) are specifically selected and adjusted to optimize its heat storage and release characteristics. By changing these physical parameters of the dielectric material, the system can maintain stable plasma generation temperature during substrate replacement without affecting the processing capability of multiple substrates

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus ensures uniform film quality across multiple substrates by stabilizing the dielectric structure's temperature, thereby maintaining consistent plasma generation and reducing variations in film quality.

Implementation Method 1

an apparatus configured to process a substrate using a plasma generated by an electromagnetic wave

Methodology Applied
Scientific EffectPlasma generation: Plasma

Implementation Method 2

a heating medium supplier capable of supplying a heating medium to the dielectric structure

Methodology Applied
Scientific EffectThermal heating: Heating

Data Source

PatentUS20260011532A1Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
Publication Date: 2026.01.08 KOKUSAI DENKI KK
  • US20260011532A1 patent drawing
  • US20260011532A1 patent drawing
  • US20260011532A1 patent drawing

AI summary

There is provided a technique that includes: a process chamber in which a substrate is processed; a dielectric structure provided in the process chamber; an electromagnetic wave supplier configured to supply an electromagnetic wave to the dielectric structure; a heating medium supplier capable of supplying a heating medium to the dielectric structure; and a controller configured to be capable of controlling a supply of the heating medium to the dielectric structure such that the heating medium is supplied to the dielectric structure when a temperature of the dielectric structure is equal to or lower than a predetermined temperature before processing the substrate.