Semiconductor Dielectric Layer Insertion Layer for Leakage Current Reduction

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Solution Overview

Problem

Existing semiconductor devices face challenges in achieving improved electrical characteristics and reducing leakage current due to defects and interface issues in dielectric layers, particularly when formed at high temperatures or through oxygen curing.

Innovation Solution

Incorporating a metallic material film insertion layer between the dielectric layer and the metal layers, which can be a metal oxide or nitride film, to act as a seed layer and prevent undesirable interface formation, thereby enhancing the electrical characteristics of the dielectric layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If the dielectric layer is formed at high temperature or through oxygen curing to improve crystallinity, then the dielectric constant and crystallinity are improved, but defects are introduced and electrical characteristics deteriorate

Engineering Contradiction:

ImprovecrystallinityVSAvoidelectrical characteristics

Core Design Contradiction:

Stability of the object's compositionVSReliability

Solution Approach 1:

A metallic material film insertion layer is introduced between the dielectric layer and the electrode to act as an intermediary. This insertion layer prevents direct harmful interactions at the interface, blocking defect formation and electrical deterioration while allowing the dielectric layer to maintain its improved crystallinity from high-temperature processing

Inventive Principle:

Principle #24Intermediary (Mediator)

2Quantity of substance

If the dielectric layer is formed at high temperature to improve crystallinity, then the dielectric constant is increased, but leakage current increases due to defect formation

Engineering Contradiction:

Improvedielectric constantVSAvoidleakage current

Core Design Contradiction:

Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The metallic material film insertion layer serves as a protective intermediary that prevents defect formation at the dielectric-electrode interface. By blocking the interface where defects would otherwise form during high-temperature processing, the insertion layer eliminates the source of leakage current while preserving the high dielectric constant achieved through temperature-enhanced deposition

Inventive Principle:

Principle #24Intermediary (Mediator)

3Device complexity

If a simple dielectric layer structure is used to reduce device complexity, then manufacturing is easier, but electrical characteristics and reliability are poor due to interface defects

Engineering Contradiction:

Improvelayer structureVSAvoidelectrical characteristics

Core Design Contradiction:

Device complexityVSReliability

Solution Approach 1:

Inventive Principle:

Principle #24Intermediary (Mediator)

Data Source

PatentUS8859383B2Method of fabricating semiconductor device having dielectric layer with improved electrical characteristics

Publication Date: 2014.10.14 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor device having a dielectric layer with improved electrical characteristics and associated methods, the semiconductor device including a lower metal layer, a dielectric layer, and an upper metal layer sequentially disposed on a semiconductor substrate and an insertion layer disposed between the dielectric layer and at least one of the lower metal layer and the upper metal layer, wherein the dielectric layer includes a metal oxide film and the insertion layer includes a metallic material film.