Dielectric Interposer Cut-In Structure for Higher Routing Density
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Solution Overview
Problem
Semiconductor packages face limitations in electrical connectivity due to restricted z-axis dimension and limited impedance tuning, leading to reduced routing density and connectivity, especially in dielectric interposers.
Innovation Solution
Incorporating an electrical-connection cut-in within the dielectric interposer, which allows for z-axis patterning of electrical connections, enabling thicker connections and improved impedance tuning, routing density, and electrical isolation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional flat electrical connections are used on the dielectric interposer surface, then the manufacturing process is simple, but the routing density and electrical connectivity are limited due to restricted z-axis dimension
Solution Approach 1:
The patent introduces z-axis patterning by forming electrical-connection cut-ins that extend into the dielectric interposer thickness, transforming the traditional two-dimensional surface connection into a three-dimensional structure. This enables thicker connections and improved routing density by utilizing the vertical dimension for electrical connection placement.
2Reliability
If thicker electrical connections are implemented to improve connectivity, then the electrical connectivity and impedance tuning are improved, but the manufacturing complexity increases
Solution Approach 1:
The patent segments the electrical connection structure into multiple parts: a first portion extending into the cut-in and a second portion on the outer surface. This segmentation allows for standardized manufacturing processes to be applied to each segment separately, making the overall complex structure more manufacturable while achieving improved electrical connectivity.
Solution Approach 2:
The electrical-connection cut-ins are formed in the dielectric interposer before the electrical connections are deposited. This preliminary action prepares the structure in advance, allowing subsequent standard deposition processes to create the thicker connections more easily, thereby improving manufacturability despite the increased complexity.
3Productivity
If electrical connections are placed closer together to increase routing density, then the connectivity improves, but the risk of solder bridging increases
Solution Approach 1:
By utilizing the z-axis dimension through cut-ins, the patent enables electrical connections to be separated vertically while maintaining close horizontal spacing. This three-dimensional arrangement increases routing density while preventing solder bridging, as the vertical separation provides natural isolation between adjacent connections.
4Reliability
If impedance tuning is improved through thicker connections, then the electrical performance is enhanced, but the manufacturing precision requirements increase
Solution Approach 1:
The electrical connection is divided into a first portion within the cut-in and a second portion on the surface, each with controlled thickness. This segmentation allows impedance tuning through the combined structure while distributing the manufacturing precision requirements across multiple standardized deposition steps, making high-precision impedance control more achievable.
Data Source
AI summary
Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a base layer, a dielectric interposer coupled to the base layer and including a first outer surface facing the base layer and an opposing second outer surface facing away from the base layer and spaced apart from the first outer surface in a direction, a first electrical-connection cut-in in the second outer surface that extends, in the direction, toward the first outer surface, and one or more first electrical connections disposed within the first electrical-connection cut-in such that at least a portion of the one or more first electrical connections does not extend, in the direction, beyond the second outer surface.