Dielectric Isolation via Organic-to-Inorganic Conversion
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Solution Overview
Problem
Existing methods struggle to effectively partially fill open features in semiconductor devices with dielectric material, particularly in small-scale, high-aspect-ratio trenches, leading to unsatisfactory performance due to incomplete insulation and potential damage to the substrate.
Innovation Solution
A method involving overfilling the open features with an organic coating, followed by selective removal and conversion of the organic material into an inorganic dielectric plug using processes like UV exposure, solvent rinsing, and oxidation, ensuring precise control over the depth and material composition to form a dielectric plug at the bottom of the feature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional dielectric filling methods are used to fill trenches, then current leakage between adjacent fins is reduced, but the method cannot achieve precise partial filling and causes damage to the substrate
Solution Approach 1:
The patent applies preliminary action by first forming an organic coating layer that completely fills the trench before selectively removing portions of it. This preliminary filling ensures that the entire trench is initially occupied, allowing subsequent selective removal to achieve the desired partial filling depth without damaging the substrate or leaving voids.
Solution Approach 2:
The patent employs extraction by forming an organic coating layer that fills the entire trench, then selectively removing portions of this coating through etching or other removal processes. This extraction approach allows precise control over the final dielectric material depth while maintaining complete initial coverage, resolving the contradiction between complete filling and precise depth control.
2Ease of manufacture
If dielectric material is directly applied to the surface, then the process is simple, but it cannot achieve void-free filling in small critical dimension features
Solution Approach 1:
The patent introduces an organic coating layer as an intermediary material that facilitates complete trench filling. This intermediary layer is applied in a liquid or vapor state that enables it to flow into and completely fill small critical dimension features, then is converted to the final dielectric material. This intermediary approach maintains process simplicity while achieving void-free filling.
Solution Approach 2:
The patent applies parameter changes by utilizing the organic coating layer's ability to change state or properties during the filling process. The organic material is applied in a form that enables complete penetration into trenches, then undergoes conversion (through etching, oxidation, or other processes) to become the final dielectric structure, achieving complete filling without complex processing.
3Manufacturing precision
If the organic coating is recessed to create a plug, then precise depth control is achieved, but additional processing steps are required
Solution Approach 1:
The patent merges multiple functions into the organic coating layer process: the same layer is used for both filling the trench and defining the final plug depth. By controlling the removal of the organic coating, the process simultaneously achieves complete initial filling and precise final depth control, reducing the need for separate filling and depth-control steps despite adding a conversion step.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise, void-free filling of small critical dimension features with thermally resistant and electrically isolating dielectric material, minimizing damage and enhancing semiconductor device performance by ensuring complete electrical isolation.
Implementation Method 1
converting the chemical composition of the organic coating plug to create an inorganic plug
Implementation Method 2
UV exposure
Implementation Method 3
oxidation
Data Source
AI summary
A method for partially filling an open feature on a substrate includes receiving a substrate having a layer with at least one open feature formed therein, wherein the open feature penetrates into the layer from an upper surface and includes sidewalls extending to a bottom of the open feature. The open feature is overfilled with an organic coating that covers the upper surface of the layer and extends to the bottom of the open feature. The method further includes removing a portion of the organic coating to expose the upper surface of the layer and recessing the organic coating to a pre-determined depth from the upper surface to create an organic coating plug of pre-determined thickness at the bottom of the open feature, and converting the chemical composition of the organic coating plug to create an inorganic plug.