Dielectric Layer Formation Using Dual Oxidant Segmentation
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Solution Overview
Problem
Current methods for forming dielectric layers in semiconductor devices face challenges in achieving both high capacitance and favorable step-coverage in a limited cell area, particularly in ensuring uniformity and preventing excessive reactivity that can degrade electrical characteristics.
Innovation Solution
A method involving the sequential use of an organometallic precursor and a combination of an inactive and active oxidant, where the inactive oxidant substitutes ligands on the precursor before the active oxidant is applied, to form a dielectric layer with improved mechanical and electrical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If only active oxidant is used to form dielectric layer, then reaction speed is improved, but uniformity and electrical characteristics are degraded due to excessive reactivity and radical reactions
Solution Approach 1:
The oxidation process is divided into two distinct stages: first using inactive oxidant (water vapor) to perform preliminary oxidation with moderate reactivity, then using active oxidant (ozone) to complete the oxidation. This segmentation allows each oxidant to perform its function optimally without the harmful effects of using only the more reactive active oxidant throughout the entire process.
Solution Approach 2:
The inactive oxidant (water vapor) is introduced first to perform preliminary oxidation of the organometallic precursor before the active oxidant is applied. This preliminary action prepares the surface and reduces the precursor in a controlled manner, preventing the excessive reactivity and radical reactions that would occur if the active oxidant were applied directly.
2Reliability
If high-k material is used to increase capacitance, then electrical characteristics are improved, but step-coverage becomes difficult to achieve in limited cell area
Solution Approach 1:
The patent changes the parameters of the oxidation process by controlling the sequence and concentration of oxidants. By using water vapor first followed by ozone, the process achieves complete oxidation while maintaining uniform deposition and good step-coverage, enabling the use of high-k materials for increased capacitance without sacrificing manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a dielectric layer with enhanced uniformity, reduced leakage current, and improved structural stability, overcoming the limitations of using only active oxidants which can cause radical reactions and degrade the layer.
Implementation Method 1
An inactive oxidant is provided onto the substrate. The inactive oxidant is reacted with the organometallic precursor.
Implementation Method 2
An active oxidant is provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.
Data Source
AI summary
To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.