Dielectric Layer for High Density Interconnects
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Solution Overview
Problem
High-density interconnects in semiconductor substrates face issues with high dielectric constants and thermal expansion in traditional materials, leading to parasitic losses, mechanical instability, and electromigration concerns.
Innovation Solution
A dielectric material with a low dielectric constant (less than 3) and low dissipation factor (less than 0.001) is developed, incorporating nanofillers and a resin system with cyanate ester, bisphenol AF, and polyimide, along with adhesion promoters to enhance bonding and mechanical stability, reducing parasitic capacitance and electromigration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If traditional dielectric materials are used in high-density interconnects, then mechanical stability is achieved, but parasitic losses increase due to high dielectric constants
Solution Approach 1:
The patent employs a composite dielectric material system comprising cyanate ester resin combined with polyimide and specific fillers. This composite approach allows optimization of dielectric properties (reducing parasitic losses through low Dk and Df) while maintaining mechanical stability through the synergistic combination of materials with complementary properties.
Solution Approach 2:
The invention achieves reduced parasitic losses by fundamentally changing the dielectric parameter profile - specifically targeting dielectric constant (Dk) less than 3 and dissipation factor (Df) less than 0.001. This parameter optimization is accomplished through selective material composition and formulation adjustments in the cyanate ester-based system.
2Area of stationary object
If high I/O densities are implemented to reduce board area, then device miniaturization is achieved, but mechanical reliability deteriorates due to thermal expansion
Solution Approach 1:
The patent addresses thermal expansion issues by selecting and formulating dielectric materials with controlled thermal expansion coefficients. The cyanate ester-polyimide composite system is designed to exhibit thermal expansion characteristics that maintain mechanical reliability under high-density interconnect conditions, preventing delamination and structural failure.
3Ease of manufacture
If conventional dielectric materials are used, then ease of manufacture is maintained, but electromigration concerns arise
Solution Approach 1:
The patent introduces adhesion promoters as intermediary substances within the dielectric material system. These promoters serve dual functions: they enhance the bonding between dielectric layers and conductive structures (improving reliability against electromigration) while maintaining compatibility with existing manufacturing processes (preserving ease of manufacture).
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the formation of very high-density interconnects with reduced parasitic capacitance, improved mechanical reliability, and effective electromigration barriers, supporting fine pitch routing and high-frequency applications.
Implementation Method 1
the dielectric layer having a dielectric constant (Dk) of less than or equal to 3 and a dissipation factor (Df) of less than or equal to 0.001
Implementation Method 2
the pendant groups in the dielectric layer chemically bond to at least one of the substrate and/or at least some of the plurality of conductive structures
Data Source
AI summary
The present disclosure is directed to systems and methods for providing a dielectric layer on a semiconductor substrate capable of supporting very high density interconnects (i.e., ≥100 IO/mm). The dielectric layer includes a maleimide polymer in which a thiol-terminated functional group crosslinks with an epoxy resin. The resultant dielectric material provides a dielectric constant of less than 3 and a dissipation factor of less than 0.001. Additionally, the thiol functional group forms coordination complexes with noble metals present in the conductive structures, thus by controlling the stoichiometry of epoxy to polyimide, the thiol-polyimide may beneficially provide an adhesion enhancer between the dielectric and noble metal conductive structures.