Dielectric Layer Resistivity via Hydrogen Plasma Doping

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Solution Overview

Problem

The insufficient insulation properties of dielectric materials in semiconductor devices, particularly silicon oxide, degrade when thickness is reduced, affecting resistivity, leakage current, electrical breakdown voltage, and mechanical and chemical stability, hindering the miniaturization and densification of semiconductor devices.

Innovation Solution

A method involving hydrogen plasma doping followed by annealing of the dielectric layer to enhance its resistivity and breakdown charge, using a hydrogen plasma doping process with varying implant energies and dosages, and subsequent annealing at temperatures between 300-600°C, significantly improves the insulating properties of the dielectric layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the thickness of dielectric insulating materials is reduced to enable miniaturization, then device density increases, but insulating properties such as resistivity and breakdown voltage deteriorate

Engineering Contradiction:

Improvedevice sizeVSAvoidinsulating properties

Core Design Contradiction:

Volume of moving objectVSReliability

Solution Approach 1:

The patent changes the chemical composition parameters of the dielectric layer by introducing nitrogen and oxygen atoms through plasma processing. This transforms the silicon oxide layer into a material with enhanced insulating properties (higher resistivity and breakdown voltage) while maintaining the required thin thickness for miniaturized devices.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite dielectric structure by incorporating nitrogen and oxygen into the silicon oxide matrix. This composite approach produces a material that combines the good insulation properties of silicon oxide with enhanced electrical characteristics from the nitrogen and oxygen doping, achieving superior insulating performance at reduced thickness.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method increases resistivity by at least 2.2 times and breakdown charge by at least 50 times, effectively improving the insulating properties of the dielectric layer, enabling better electrical isolation and reduced leakage current, even as device sizes shrink and densities increase.

Implementation Method 1

performing a hydrogen plasma doping process to the dielectric layer

Methodology Applied

Scientific EffectPlasma: Plasma

Implementation Method 2

performing a hydrogen plasma doping process to the dielectric layer

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Implementation Method 3

annealing the dielectric layer

Methodology Applied

Scientific EffectAnnealing: Annealing

Implementation Method 4

annealing the dielectric layer

Methodology Applied

Scientific EffectThermal diffusion: Diffusion

Data Source

PatentUS8293659B2Method for fabricating dielectric layer with improved insulating properties

Publication Date: 2012.10.23 NAN YA TECH

AI summary

A method for fabricating a dielectric layer with improved insulating properties is provided, including: providing a dielectric layer having a first resistivity; performing a hydrogen plasma doping process to the dielectric layer; and annealing the dielectric layer, wherein the dielectric layer has a second resistivity greater than that of the first resistivity after annealing thereof.