Dielectric Layer Thermal Treatment for EUV Shrinkage
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Solution Overview
Problem
As semiconductor devices continue to shrink, extreme ultraviolet lithography (EUVL) causes material property changes and thickness shrinkage in dielectric layers, leading to challenges in maintaining pattern fidelity and film quality due to the high energy deposition of EUV radiation.
Innovation Solution
Thermal treatment processes are applied to dielectric layers before EUVL processing, which include heating to temperatures up to 400°C and exposure to ultraviolet radiation, to densify the material structure and reduce EUV-induced changes, thereby stabilizing the film and reducing thickness shrinkage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If EUVL is used for manufacturing smaller semiconductor devices, then manufacturing precision is improved, but material property changes and thickness shrinkage occur in dielectric layers
Solution Approach 1:
The patent applies thermal treatment to dielectric layers before EUVL processing to densify the material structure in advance. This preliminary densification reduces the dielectric layer's sensitivity to EUV radiation, preventing thickness shrinkage and material property changes during subsequent lithography operations.
Solution Approach 2:
The patent changes the physical state and structural parameters of the dielectric layer through thermal treatment. By heating the dielectric layer to specific temperatures (e.g., 400-800°C), the material undergoes structural transformation that increases its density and stability, making it resistant to EUV-induced changes.
2Stability of the object's composition
If thermal treatment is applied to densify dielectric layers, then EUV-induced material property changes are reduced, but processing complexity increases
Solution Approach 1:
The patent combines the thermal treatment step with existing semiconductor manufacturing process flows. The thermal annealing is integrated into the sequence of deposition, lithography, and etching operations, allowing the densification process to be performed using standard equipment and process integration techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The thermal treatment effectively reduces EUV-induced material property changes and thickness shrinkage, improving the heat and radiation resistance of dielectric layers, and enhancing the bulk film quality, allowing for more precise and reliable semiconductor device fabrication.
Implementation Method 1
Thermal treatment processes are applied to dielectric layers before EUVL processing, which include heating to temperatures up to 400°C
Implementation Method 2
exposure to ultraviolet radiation, to densify the material structure and reduce EUV-induced changes
Data Source
AI summary
Representative systems and methods for preventing or otherwise reducing extreme-ultraviolet-induced material property changes (e.g., layer thickness shrinkage) include one or more thermal treatments to at least partially stabilize a material forming a material layer disposed over a substrate prior to extreme ultraviolet (EUV) exposure (e.g., wavelengths spanning about 124 nm to about 10 nm) attendant to photolithographic processing. Representative systems and methods provide for reduction of average compressive stress in a material layer after thermal treatment prior to extreme EUV photolithographic patterning. Representative thermal treatments may include one or more annealing processes, ultraviolet (UV) radiation treatments, ion implantations, ion bombardments, plasma treatments, surface baking treatments, surface coating treatments, surface ashing treatments, or pulsed laser treatments.