Dielectric Liner Air-Gap Structure for Lower RC Interconnect Delay
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to deficiencies, necessitating improvements in the manufacturing process to address increased complexity and integration challenges.
Innovation Solution
A semiconductor device structure is developed with dielectric liner portions and a method that includes forming dielectric layers, conductive layers, and interconnect structures, where air gaps and filling portions are strategically placed within dielectric liner layers to reduce capacitive coupling and RC delay, using materials like boron carbonitride and low-k dielectric materials, and covered with silicon-based layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dielectric liner portions with air gaps and filling portions are added to reduce capacitive coupling and RC delay, then performance and operation speed are improved, but device structure and manufacturing complexity increase
Solution Approach 1:
The dielectric liner is segmented into different portions (first dielectric liner portion with air gap, second dielectric liner portion with filling portion) that are disposed adjacent to different interconnect structures. This segmentation allows each portion to be optimized for its specific function while maintaining overall system performance.
Solution Approach 2:
Different regions of the dielectric liner are assigned different local properties: the first dielectric liner portion contains an air gap for minimal capacitive coupling, while the second dielectric liner portion contains a filling portion for mechanical support and stress management. This local differentiation optimizes performance for each specific interconnect structure.
2Speed
If air gaps and filling portions are strategically placed within dielectric liner layers to reduce capacitive coupling and RC delay, then operation speed is improved, but manufacturing process complexity increases
Solution Approach 1:
The air gaps and filling portions are formed during the dielectric liner deposition process itself, rather than requiring separate post-processing steps. The dielectric liner is deposited conformally over the interconnect structures, and the air gaps and filling portions are created as part of this single deposition operation, simplifying the manufacturing process.
Solution Approach 2:
The dielectric liner portions act as intermediaries between the interconnect structures and the surrounding environment. By incorporating air gaps and filling portions within the dielectric liner, the patent mediates the electrical and mechanical interactions between interconnect structures, reducing capacitive coupling and RC delay without requiring direct modification of the interconnect structures themselves.
3Reliability
If multiple different materials are used for different dielectric liner portions, then capacitive coupling and RC delay are reduced, but manufacturing cost and process complexity increase
Solution Approach 1:
The first dielectric liner portion and second dielectric liner portion are formed from the same dielectric liner material deposited in a single conformal deposition process. This homogeneous approach simplifies manufacturing by eliminating the need for multiple material deposition steps, while still achieving the desired electrical performance through the strategic placement of air gaps and filling portions within the uniform dielectric liner.
Data Source
AI summary
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first interconnect structure and a second interconnect structure disposed over the second dielectric layer. The semiconductor device structure further includes a first dielectric liner portion disposed adjacent to the first interconnect structure. An air gap is enclosed in the first dielectric liner portion. In addition, the semiconductor device structure includes a second dielectric liner portion disposed adjacent to the second interconnect structure, and a filling portion surrounded by the second dielectric liner portion.