Dielectric Spacer Liner for Reliable Source/Drain Contacts

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Solution Overview

Problem

The challenge in semiconductor manufacturing is to maintain high-performance integrated circuits with smaller contact areas and reduced energy consumption, which is hindered by the limitations of metal silicide contacts in current technologies.

Innovation Solution

The formation of a dielectric spacer liner on the source/drain contact in semiconductor devices, which protects the gate stack during subsequent processing steps and enhances the integrity of metal semiconductor alloy contacts, thereby improving the reliability and performance of the circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If metal silicide contacts are used to reduce contact resistance and energy consumption, then circuit performance is improved, but the gate stack becomes vulnerable to damage during subsequent processing steps

Engineering Contradiction:

Improvecontact reliabilityVSAvoidgate stack damage

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A dielectric spacer liner is introduced as an intermediary protective layer between the metal silicide contact and the gate stack. This liner prevents direct contact and potential damage during processing while allowing the metal silicide contact to maintain its low resistance properties. The spacer acts as a buffer that protects the gate stack from harmful effects without compromising the electrical performance of the contact.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The dielectric spacer liner is formed on the gate stack before the metal silicide contact is deposited and processed. This preliminary protective layer is in place before any potentially damaging processing steps occur, preventing gate stack damage during subsequent manufacturing operations while allowing the contact formation to proceed.

Inventive Principle:

Principle #10Preliminary action

2Use of energy by moving object

If contact area is reduced to improve circuit performance, then energy consumption decreases, but manufacturing precision requirements increase

Engineering Contradiction:

Improveenergy consumptionVSAvoidcontact formation precision

Core Design Contradiction:

Use of energy by moving objectVSManufacturing precision

Solution Approach 1:

The dielectric spacer liner is implemented as a thin film layer that provides protective functionality without significantly increasing the contact area. This thin film approach allows the contact to maintain its small size for low energy consumption while the liner provides the necessary protection and process margin to achieve consistent formation with high manufacturing precision.

Inventive Principle:

Principle #30Flexible shells and thin films

Data Source

PatentUS12507458B2Semiconductor device with dielectric spacer liner on source/drain contact

Publication Date: 2025.12.23 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor device includes a source/drain region, a silicide region, a source/drain contact, and a silicon-containing dielectric liner. The source/drain region is in a substrate. The silicide region is embedded in the source/drain region. The source/drain contact is over the silicide region. The silicon-containing dielectric liner surrounds the source/drain contact. The source/drain region is in contact with an outer sidewall of the silicon-containing dielectric liner but separated from a bottom surface of the silicon-containing dielectric liner by the silicide region.