Dielectric Composition for Low-Temperature Dense Sintering
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Solution Overview
Problem
Existing dielectric compositions face challenges in achieving high sintering density and specific dielectric constant when fired at low temperatures, limiting their performance in electronic components.
Innovation Solution
A dielectric composition comprising {BaxSr(1-x)}mTa4O12 with specific ratios of silicon and manganese, optionally with additional vanadium, magnesium, zirconium, tungsten, and rare-earth elements, allowing for high sintering density and specific dielectric constant even at relatively low firing temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If a high-density dielectric substance is not fired at a high temperature, then energy consumption is reduced, but sintering density deteriorates
Solution Approach 1:
The patent changes the chemical composition parameters of the dielectric substance by incorporating specific amounts of silicon (5.0-20.0 parts by mole as SiO2) and manganese (1.0-4.5 parts by mole as MnO) along with controlling the m parameter (1.95-2.40) of the main component {BaxSr(1-x)}mTa4O12. These parameter changes enable the material to achieve high sintering density at lower firing temperatures (1200°C to 1355°C) by lowering the sintering initiation temperature through the synergistic effect of the added elements.
2Device complexity
If a high-density dielectric substance is not fired at a high temperature, then equipment requirements are reduced, but sintering density deteriorates
Solution Approach 1:
The patent modifies the compositional parameters of the dielectric material by adding silicon and manganese within specific ranges and controlling the main component structure. This enables the material to sinter densely at lower temperatures (1200°C to 1355°C), thereby reducing the complexity and cost of firing equipment while achieving the required sintering density.
3Manufacturing precision
If silicon and manganese are added to lower sintering initiation temperature, then sintering density is improved, but composition complexity increases
Solution Approach 1:
The patent introduces silicon and manganese as sintering aids with clearly defined quantitative ranges (silicon: 5.0-20.0 parts by mole as SiO2, manganese: 1.0-4.5 parts by mole as MnO). While this increases compositional complexity, it enables significant reduction in sintering temperature and improvement in sintering density. The controlled addition of these elements creates a synergistic effect that justifies the increased compositional complexity by achieving superior sintering performance.
Solution Approach 2:
The patent creates a composite dielectric material system combining the main component {BaxSr(1-x)}mTa4O12 with silicon and manganese additives. This composite approach allows the material to benefit from the high dielectric properties of the main component while the silicon and manganese contribute to lowering sintering temperature and improving sintering density, achieving a balance between performance and processability.
Data Source
AI summary
Provided is a dielectric composition containing: a main component expressed by {BaxSr(1-x)}mTa4O12; and a first subcomponent, m satisfying a relationship of 1.95≤m≤2.40. The first subcomponent includes silicon and manganese. When the amount of the main component contained in the dielectric composition is set to 100 parts by mole, the amount of silicon contained in the dielectric composition is 5.0 to 20.0 parts by mole in terms of SiO2, and the amount of manganese contained in the dielectric composition is 1.0 to 4.5 parts by mole in terms of MnO.