Dielectric Member for Plasma Density Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional RLSA-type plasma processing apparatuses fail to achieve uniform plasma density in the circumference direction due to factors like device shape errors and gaps between components, leading to non-uniform plasma generation within the processing chamber.
Innovation Solution
A plasma processing apparatus with a dielectric member disposed around a part of the circumference of the inner conductor within the coaxial waveguide, allowing for adjustable plasma density distribution by rotating the dielectric member to control microwave propagation and plasma generation areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dielectric member is disposed around part of the inner conductor circumference, then plasma density distribution can be adjusted in the circumference direction, but device complexity increases
Solution Approach 1:
The dielectric member serves as an intermediary element that mediates between the coaxial waveguide and wavelength-shortening plate. It modifies microwave propagation characteristics in the connecting area without requiring fundamental changes to the waveguide structure, thus achieving plasma density control while minimizing the increase in device complexity.
Solution Approach 2:
The dielectric member is disposed to surround only part of the circumference of the inner conductor rather than the entire circumference. This partial action is sufficient to create the necessary plasma density variation in the circumference direction without the excessive complexity that would result from a complete circumferential enclosure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform plasma density in both radial and circumference directions, enabling efficient processing of large semiconductor wafers by adjusting plasma density distribution, thereby ensuring uniform and fast plasma processing.
Implementation Method 1
microwaves passing through the dielectric member may be projected into the area corresponding to the dielectric member, so that plasma density may be lowered at this area
Implementation Method 2
microwaves supplied from a coaxial waveguide are introduced into a processing container via a wavelength-shortening plate
Implementation Method 3
a process gas is plasmatized in the processing container, and a substrate is processed using the plasma
Data Source
AI summary
In the plasma processing apparatus 1, microwaves supplied from a coaxial waveguide 30 are introduced into a processing container 2 via a wavelength-shortening plate 25, a process gas is plasmatized in the processing container 2, and a substrate W is processed using the plasma. In the plasma processing apparatus 1, a dielectric member 45 is disposed at a connecting area between the coaxial waveguide 30 and the wavelength-shortening plate 25. Inside an outer conductor 32 of the coaxial waveguide 30, the dielectric member 45 is disposed to surround a part of a circumference of an inner conductor 31 of the coaxial waveguide 30, and is disposed at any position around the circumference of the inner conductor 31.