Dielectric Opening Fill Using Liner-Flowable Void-Free Deposition
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Solution Overview
Problem
The challenge in semiconductor manufacturing is filling high aspect ratio openings in IC components with dielectric materials without forming voids or seams, as conventional methods either result in voids due to non-flowable processes or require high temperature treatments that can lead to undesirable reactions and property gradients in flowable processes.
Innovation Solution
A combination method is proposed, where a non-flowable process is used to deposit a solid dielectric liner on the inner surfaces of openings, followed by a flowable process to fill the remaining volume with a dielectric material, applying excitation to cross-link it into a solid matrix, thereby avoiding voids and high temperature treatments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a non-flowable process is used to deposit dielectric material, then the material can be deposited on inner surfaces, but voids are formed in high aspect ratio openings
Solution Approach 1:
The filling process is segmented into two distinct stages: first a non-flowable process deposits dielectric liner on the inner surfaces, then a flowable process fills the remaining volume. This segmentation allows each process to optimize for its specific function, preventing void formation while maintaining deposition uniformity.
Solution Approach 2:
The patent uses composite filling approach combining non-flowable dielectric liner material and flowable fill material. The dielectric liner provides structural integrity on surfaces, while the flowable material ensures complete volume filling without voids, creating a composite structure that leverages the strengths of both material types.
2Reliability
If a flowable process is used to fill openings, then complete filling without voids is achieved, but high temperature treatment is required causing undesirable reactions and property gradients
Solution Approach 1:
The non-flowable dielectric liner is deposited in advance on the inner surfaces before the flowable filling process. This preliminary action creates a protective framework that allows subsequent flowable material to be filled and cured at lower temperatures, preventing thermal damage to the substrate while ensuring complete filling.
Solution Approach 2:
The patent changes the physical and chemical parameters of the filling process by using a two-stage approach with different materials and conditions. The first stage uses non-flowable deposition at controlled parameters, while the second stage uses flowable material with modified curing parameters, avoiding the need for high temperature treatment that causes property gradients.
3Ease of manufacture
If conventional filling methods are used, then the process is simple, but the substrate is exposed to chemical reactions and high temperature treatments
Solution Approach 1:
The non-flowable dielectric liner acts as an intermediary layer between the substrate and the flowable fill material. This intermediary protects the substrate from direct exposure to harsh chemicals and high temperatures during the filling process, while still enabling complete opening filling through the subsequent flowable process.
Solution Approach 2:
The dielectric liner is deposited beforehand to cushion and protect the substrate from the harmful effects of the flowable filling process. This prior protective measure prevents direct chemical reactions and thermal exposure to the substrate, reducing harmful factors while maintaining manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively fills high aspect ratio openings without voids or seams, providing improved uniformity and thermal stability while protecting the substrate from chemical reactions, and allows for the use of a wider array of materials with enhanced etch performance.
Implementation Method 1
a non-flowable process is used to deposit a solid dielectric liner on the inner surfaces of openings
Implementation Method 2
a non-flowable process is used to deposit a solid dielectric liner on the inner surfaces of openings
Implementation Method 3
applying an excitation (e.g., a stimuli) to facilitate cross-linking of the flowable fill dielectric into a matrix (e.g., a three-dimensional (3D) network) of solid fill dielectric
Implementation Method 4
applying an excitation (e.g., a stimuli) to facilitate cross-linking of the flowable fill dielectric into a matrix
Data Source
AI summary
Disclosed herein are methods for manufacturing IC components using bottom-up fill of openings with a dielectric material. In one aspect, an exemplary method includes, first, depositing a solid dielectric liner on the inner surfaces of the openings using a non-flowable process, and subsequently filling the remaining empty volume of the openings with a fill dielectric using a flowable process. Such a combination method may maximize the individual strengths of the non-flowable and flowable processes due to the synergetic effect achieved by their combined use, while reducing their respective drawbacks. Assemblies and devices manufactured using such methods are disclosed as well.