Dielectric Opening Fill Using Liner-Plus-Flowable Deposition
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in filling high aspect ratio openings with dielectric materials without forming voids or seams, as conventional non-flowable and flowable processes each have limitations, such as void formation and high temperature requirements, which affect yield and substrate integrity.
Innovation Solution
A combination method involving a non-flowable process to deposit a solid dielectric liner on opening surfaces followed by a flowable process to fill the remaining volume with a dielectric, utilizing excitation for cross-linking, thereby combining the strengths of both methods to avoid voids and mitigate high temperature issues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a non-flowable process is used to deposit dielectric material, then the material can be deposited conformally on opening surfaces, but voids form in high aspect ratio openings
Solution Approach 1:
The filling process is divided into two distinct stages: first a non-flowable process deposits conformal liner material on opening surfaces, then a flowable process fills the remaining volume. This segmentation allows each process to optimize for its specific function, eliminating voids while maintaining conformal coverage.
Solution Approach 2:
The patent uses composite filling where different dielectric materials are combined - a non-flowable conformal liner material and a flowable fill material. This composite approach leverages the advantages of both material types to achieve complete void-free filling with conformal surface coverage.
2Reliability
If a flowable process is used to fill openings, then voids can be avoided, but high temperature processing is required which affects substrate integrity
Solution Approach 1:
The non-flowable conformal deposition is performed first as a preliminary action before the flowable filling process. This preliminary conformal layer provides structural support and protection, enabling the subsequent flowable process to be performed at lower temperatures without compromising substrate integrity.
Solution Approach 2:
Different regions of the opening are filled with materials having different properties - the conformal liner provides structural integrity and protection, while the flowable fill provides void-free filling. This local differentiation allows temperature reduction while maintaining both void-free filling and substrate protection.
3Ease of manufacture
If conventional processes are used for filling, then the process is simple, but the yield is reduced due to void formation and substrate damage
Solution Approach 1:
The patent merges two previously separate processes (non-flowable conformal deposition and flowable filling) into a combined sequential process. This merging eliminates the defects of each individual process when used alone, achieving both high yield and reasonable process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables filling high aspect ratio openings without voids or seams, while protecting the substrate and allowing for a wider array of materials with improved performance and uniformity, enhancing the manufacturing of semiconductor devices.
Implementation Method 1
depositing a solid dielectric liner on the inner surfaces of the openings
Implementation Method 2
depositing a solid dielectric liner on the inner surfaces of the openings
Implementation Method 3
applying an excitation to facilitate cross-linking of the flowable fill dielectric into a matrix of solid fill dielectric
Data Source
AI summary
Disclosed herein are methods for manufacturing IC components using bottom-up fill of openings with a dielectric material. In one aspect, an exemplary method includes, first, depositing a solid dielectric liner on the inner surfaces of the openings using a non-flowable process, and subsequently filling the remaining empty volume of the openings with a fill dielectric using a flowable process. Such a combination method may maximize the individual strengths of the non-flowable and flowable processes due to the synergetic effect achieved by their combined use, while reducing their respective drawbacks. Assemblies and devices manufactured using such methods are disclosed as well.