Semiconductor Dielectric Oxide Ring Structure for Via Leakage
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Solution Overview
Problem
Defects in the dielectric layer of semiconductor structures cause leakage between vias, necessitating an improved dielectric layer structure to enhance insulation and reduce leakage.
Innovation Solution
The introduction of oxide ring structures formed by oxidizing a portion of the dielectric layer using O2 plasma, which densifies the surface and reduces leakage by curing dangling bonds and oxidizing the dielectric layers to silicon oxide or silanol, thereby improving the film properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional dielectric layer is used, then the manufacturing process is simple, but leakage occurs between vias due to defects and dangling bonds
Solution Approach 1:
The dielectric layer is segmented into multiple functional layers: a first dielectric layer providing mechanical support and a second dielectric layer providing electrical insulation, with an oxide ring structure at the interface. This segmentation allows each layer to optimize its specific function, reducing overall leakage while maintaining structural integrity.
Solution Approach 2:
An oxide ring structure is formed preliminarily at the interface between dielectric layers before via formation. This preliminary oxidation creates a pre-conditioned barrier that prevents leakage paths from developing during subsequent processing and operation, addressing the leakage problem before it can manifest.
Solution Approach 3:
The oxide ring structure provides localized high-quality insulation at the critical interface region between dielectric layers, where leakage is most likely to occur. Rather than uniformly treating the entire dielectric layer, the oxidation is concentrated at the specific location needing enhanced performance.
2Reliability
If the dielectric layer is densified to reduce leakage, then insulation improves, but the manufacturing process becomes more complex
Solution Approach 1:
Oxygen plasma is used as a strong oxidizing environment to rapidly densify the dielectric layer surface and form the oxide ring structure. This accelerated oxidation process achieves high-density insulation performance without requiring extended processing times or multiple sequential treatments, balancing manufacturing ease with improved reliability.
Solution Approach 2:
The mechanical/thermal densification process is replaced with a chemical oxidation process using oxygen plasma. This substitution achieves densification and leakage reduction through chemical transformation rather than physical compression or heating, simplifying the manufacturing approach while achieving the desired insulation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxide ring structures effectively reduce leakage and enhance the film properties of the dielectric layer, leading to improved insulation and reduced defects in semiconductor structures.
Implementation Method 1
oxidizing the dielectric layers to silicon oxide or silanol
Implementation Method 2
oxidizing a portion of the dielectric layer using O2 plasma
Data Source
AI summary
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a semiconductor substrate, a first patterned conductive layer, a second patterned conductive layer, a first dielectric layer, a third patterned conductive layer, a fourth patterned conductive layer, a second dielectric layer, and an oxide structure. The first dielectric layer is disposed on the semiconductor substrate and surrounds the first patterned conductive layer and the second patterned conductive layer. The third patterned conductive layer is disposed on the first patterned conductive layer. The fourth patterned conductive layer is disposed on the second patterned conductive layer. The second dielectric layer is disposed on the first dielectric layer. The oxide structure is in contact with the second dielectric layer, a side surface of the fourth patterned conductive layer, and a side surface of the third patterned conductive layer.