3D IC Bonding via Dielectric Phase Transition for Stress Relief
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Solution Overview
Problem
Three-dimensional integrated circuits (3DICs) face challenges in enhancing adhesion and bonding strength while minimizing stress during the manufacturing process, particularly due to the complexity of stacking multiple semiconductor dies and the varying properties of dielectric materials used in bonding.
Innovation Solution
The semiconductor device employs a bonding structure with dielectric materials that expand and contract during the bonding process, combined with recess patterns and diffusion barrier layers, to enhance adhesion and reduce stress, using materials like polyimide, polybenzoxazole, or benzocyclobutene polymers, and conductive pads to form a strong and stress-reduced bonding interface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple semiconductor dies are stacked to form 3DICs, then integration density is improved, but bonding strength and adhesion deteriorate due to stress during manufacturing
Solution Approach 1:
The patent changes the physical state of dielectric materials by utilizing phase transitions during bonding. Specifically, it employs materials that undergo solid-to-liquid or solid-to-gas transitions at bonding temperatures, enabling stress relief while maintaining bonding strength. This parameter change resolves the contradiction by allowing high integration density through stacking while preventing bonding failure through stress-induced phase changes.
Solution Approach 2:
The patent directly applies phase transitions of dielectric materials during the bonding process. Materials such as benzocyclobutene (BCB) polymer undergo thermal decomposition and phase change at bonding temperatures, transforming from a rigid state to a more compliant state that can accommodate stress. This phase transition mechanism enables multiple dies to be stacked with high integration density while maintaining reliable bonding interfaces.
2Reliability
If dielectric materials with different properties are used in bonding, then adhesion is improved, but stress during manufacturing increases
Solution Approach 1:
The patent utilizes temperature-dependent parameter changes in dielectric materials to resolve the stress-adhesion contradiction. By selecting materials whose mechanical properties (modulus, viscosity) change dramatically at bonding temperatures, the system achieves strong adhesion at room temperature while experiencing stress relief at elevated temperatures during the bonding process. This temporal separation of properties resolves the contradiction between adhesion and stress.
Solution Approach 2:
The patent employs composite dielectric structures combining multiple materials with complementary properties. For example, it uses combinations such as BCB polymer with specific glass transition temperatures, or layered structures of different dielectrics, where each material contributes different characteristics. This composite approach enables simultaneous achievement of strong adhesion and stress management by distributing mechanical loads across materials with different thermal and mechanical properties.
3Reliability
If bonding temperature is increased to enhance bonding strength, then adhesion is improved, but stress-induced damage increases
Solution Approach 1:
The patent exploits phase transitions that occur at bonding temperatures to convert the harmful effects of high temperature into beneficial stress relief. Materials like BCB polymer undergo thermal decomposition and viscosity changes at bonding temperatures (e.g., 250-350°C), transforming from a brittle state to a more ductile state that can accommodate thermal expansion mismatches and reduce stress concentration. This phase transition mechanism allows high bonding strength to be achieved without proportional increase in stress-induced damage.
Solution Approach 2:
The patent converts the potentially harmful thermal stress and material degradation at high bonding temperatures into beneficial effects. By carefully selecting dielectric materials with specific thermal decomposition characteristics, the patent transforms thermal stress that would normally cause damage into a mechanism for stress relief through phase change. The high temperature, which could cause damage, instead triggers material transformation that enhances bonding while reducing stress concentration at interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the bonding strength and reduces stress-induced issues during manufacturing, leading to improved integration density and performance in 3DICs by ensuring strong and reliable connections between stacked semiconductor dies.
Implementation Method 1
One of the first dielectric material and the second dielectric material is made of a material which expands during a bonding process, and the other one of the first dielectric material and the second dielectric material is made of a material that contracts during the bonding process
Data Source
AI summary
A semiconductor device includes a first substrate, a through substrate via, a second substrate, and a bonding structure. The first substrate includes a first dielectric material, and the first dielectric material includes a first conductive pad embedded therein. The through substrate via is formed in the first substrate. The second substrate includes a second dielectric material, the second dielectric material includes a second conductive pad embedded therein, the first dielectric material is different from the second dielectric material, the second conductive pad has a first height, the second dielectric material has a second height, and the first height is less than the second height. The bonding structure is formed between the first substrate and the second substrate, wherein the bonding structure includes the first conductive pad bonded to the second conductive pad and the first dielectric material bonded to the second dielectric material.


