Dielectric Plasma Chamber Structure for Erosion-Resistant Processing
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Solution Overview
Problem
Existing plasma chambers face challenges such as incompatibility with hydrogen and halogen plasma chemistries, high erosion rates, and metallic contamination in semiconductor processing, along with increased manufacturing complexity and cost.
Innovation Solution
The development of thick-walled plasma chambers made from high purity dielectric materials, such as alumina ceramic, that are compatible with hydrogen and halogen plasma chemistries, minimizing metallic contamination and offering improved thermo-mechanical properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If quartz material is used to manufacture plasma chamber, then plasma chamber can be formed by high-temperature forming and welding, but it is incompatible with hydrogen and halogen plasma chemistries due to high erosion rate
Solution Approach 1:
The patent employs a composite structure consisting of a metal substrate (aluminum or aluminum alloy) combined with a dielectric coating layer (anodized aluminum oxide or other ceramic coatings). This composite approach allows the chamber to benefit from the mechanical strength and thermal conductivity of metal while the dielectric coating provides resistance to plasma erosion and chemical compatibility with hydrogen and halogen chemistries, thereby resolving the contradiction between ease of manufacture and plasma chemistry compatibility.
2Reliability
If dielectric coating is applied to protect plasma chamber from erosion, then resistance to plasma chemistry is improved, but coating degrades due to ion bombardment over time
Solution Approach 1:
The patent utilizes ion implantation to modify the dielectric coating by incorporating nitrogen and/or carbon ions into the coating structure. This parameter change transforms the coating's physical and chemical properties, creating a more durable, cross-linked network structure that resists ion bombardment and degradation. The ion-implanted coating maintains its protective function for extended periods under plasma exposure, thereby extending the coating lifespan while preserving erosion resistance.
3Reliability
If thick dielectric coating is applied to resist plasma erosion, then plasma chemistry compatibility is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent replaces traditional mechanical coating methods (such as physical vapor deposition or chemical vapor deposition) with an electrochemical anodization process to form the dielectric coating. This substitution simplifies the manufacturing process by using a self-organizing electrochemical reaction that naturally forms uniform, thick coatings without requiring complex deposition equipment or multiple processing steps. The anodization process can directly produce coatings tens of micrometers thick in a single step, reducing manufacturing complexity and cost while maintaining plasma chemistry compatibility.
4Temperature
If aluminum substrate is used for plasma chamber, then thermal conductivity is improved for heat removal, but metallic contamination occurs in semiconductor processing
Solution Approach 1:
The patent extracts the harmful metallic elements from the plasma-facing surface by applying a non-metallic dielectric coating (anodized aluminum oxide or other ceramic coatings) over the aluminum substrate. This extraction eliminates direct contact between the metal and plasma, preventing metallic contamination while preserving the substrate's thermal conductivity through the dielectric layer. The dielectric coating acts as a barrier that allows heat to conduct from the plasma interface to the cooling system while blocking metal atoms from entering the plasma and contaminating semiconductor wafers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These plasma chambers effectively resist erosion from hydrogen and halogen plasma chemistries, reduce metallic contamination, and lower manufacturing complexity and costs, while maintaining reliable plasma ignition and processing capabilities.
Implementation Method 1
These plasma chambers effectively resist erosion from hydrogen and halogen plasma chemistries
Implementation Method 2
a plasma chamber made from a dielectric material... a plasma chamber with improved plasma resistance
Data Source
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AI summary
A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.