Dielectric Plasma Chamber Structure for Halogen-Resistant Processing
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Solution Overview
Problem
Existing plasma chambers face challenges with resistance to hydrogen and halogen plasma chemistries, metallic contamination, and manufacturing complexity and cost, particularly in semiconductor processing, where they are prone to erosion and have limitations in igniting in-process gases and maintaining high plasma ignition voltages.
Innovation Solution
The development of thick-walled plasma chambers made from high-purity dielectric materials, such as alumina ceramic, with bonded flanges to enhance resistance to plasma chemistries and minimize metallic contamination, using a manufacturing process that involves constructing and bonding dielectric sections to form a plasma channel capable of igniting in-process gases while reducing thermal and mechanical stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If quartz material is used to manufacture plasma chamber, then plasma chamber can be formed by high-temperature forming and welding, but it is incompatible with hydrogen and halogen plasma chemistries due to high erosion rate
Solution Approach 1:
The patent uses alumina ceramic material instead of quartz to manufacture the plasma chamber. Alumina ceramic provides both manufacturability through high-temperature forming and welding, and superior resistance to hydrogen and halogen plasma chemistries with lower erosion rates, creating a composite solution that addresses both manufacturing ease and chemical resistance requirements.
2Ease of manufacture
If aluminum plasma blocks with dielectric coating are used, then manufacturing is simplified, but the thin coating cannot withstand high plasma ignition voltages due to electrical breakdown
Solution Approach 1:
The patent changes the material parameter from aluminum with thin dielectric coating to solid alumina ceramic. This parameter change eliminates the electrical breakdown issue at high plasma ignition voltages while maintaining manufacturing simplicity through established ceramic forming and welding processes. The solid dielectric material provides inherent high voltage withstand capability without requiring thin coatings.
3Reliability
If dielectric plasma chamber is used, then resistance to plasma chemistries is improved, but heat removal capability is reduced
Solution Approach 1:
The patent employs alumina ceramic as a composite material solution that balances chemical resistance and thermal management. While dielectric materials provide superior resistance to plasma chemistries, alumina ceramic specifically offers adequate thermal conductivity for heat removal in plasma chamber applications, creating a balanced composite solution that addresses both requirements simultaneously.
4Reliability
If thick-walled plasma chamber is used, then resistance to plasma chemistries and thermal stress is improved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the wall thickness parameter to thick-walled construction in alumina ceramic plasma chambers. This parameter change provides improved resistance to plasma chemistry erosion and thermal stress while the inherent properties of alumina ceramic allow for this increased thickness without proportionally increasing manufacturing complexity, as the material can be formed and welded in thick sections using established processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved resistance to hydrogen and halogen plasma chemistries, minimizes metallic contamination, and reduces manufacturing complexity and cost, enabling reliable and efficient plasma processing with enhanced thermo-mechanical properties and extended operational life.
Implementation Method 1
a first dielectric plasma chamber portion and a second dielectric plasma chamber portion
Implementation Method 2
Plasma discharges can be used to excite gases to produce activated gases containing ions, free radicals, atoms and molecules
Implementation Method 3
an interface that bonds together the first and second dielectric plasma chamber portions
Data Source
AI summary
A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.