Dielectric Platform With Sealed Voids For RF Semiconductor
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Solution Overview
Problem
Semiconductor devices formed on conductive silicon substrates face issues with low quality factors and reduced frequency of operation due to parasitic capacitive coupling, which limits the performance of passive devices and power transistors in RF and other applications.
Innovation Solution
A semiconductor structure incorporating a dielectric platform with sealed voids and vertical structures is used to reduce parasitic capacitance, increase the frequency of operation, and enhance the quality factor of passive devices, while providing electrical isolation and increased breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If passive devices are formed on conductive silicon substrate, then device integration is achieved, but parasitic capacitive coupling reduces quality factor and frequency of operation
Solution Approach 1:
A dielectric platform is introduced as an intermediary layer between the conductive silicon substrate and the passive devices. This dielectric platform with sealed voids acts as a mediator that reduces parasitic capacitive coupling while maintaining device integration, thereby improving quality factor without sacrificing integration benefits
2Area of stationary object
If passive devices are formed close to conductive silicon substrate, then area is reduced, but parasitic capacitance increases and frequency of operation decreases
Solution Approach 1:
The dielectric platform serves as an intermediary that enables passive devices to be positioned close to the substrate while maintaining high frequency of operation. The sealed voids within the dielectric platform reduce parasitic capacitance, allowing compact layout without sacrificing performance
3Power
If power transistor breakdown voltage is increased, then output power capability is improved, but device complexity increases
Solution Approach 1:
The breakdown voltage of the power transistor is improved through parameter changes in the dielectric platform structure, specifically by adjusting the depth, width, and material composition of the sealed voids. This enables higher output power capability while managing device complexity through optimized geometric parameters
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric platform with sealed voids and vertical structures effectively reduces parasitic capacitance, increases the frequency of operation, and enhances the quality factor of passive devices, enabling higher breakdown voltages and improved performance in semiconductor devices.
Implementation Method 1
parasitic capacitive coupling between these passive devices and the conductive silicon substrate, the frequency of operation of the integrated devices is reduced
Implementation Method 2
it may be contemplated to have a power transistor that has an increased breakdown voltage to enable the power transistor to operate at a relatively higher voltage
Data Source
AI summary
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a cavity that extends at least about one micron or greater below the surface of the semiconductor material, filling the cavity with a sacrificial material, forming a dielectric material over the sacrificial material and over at least a portion of the surface of the semiconductor material, and removing a portion of the dielectric material to form an opening to expose a portion of the sacrificial material, wherein the opening has a width that is substantially less than a width of the cavity and the dielectric material is rigid or substantially rigid. The method further includes removing the sacrificial material. Other embodiments are described and claimed.