Dielectric Plug Structure for Suppressing Gas Passage Discharge
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Solution Overview
Problem
Existing semiconductor manufacturing equipment members experience discharge issues in the gas passage portion that vertically penetrates the dielectric substrate near the bonding portion between the dielectric substrate and the base plate, which current techniques have not adequately addressed.
Innovation Solution
A member for semiconductor manufacturing equipment is designed with a dielectric plug composed of a dense portion and a voltage drop promoting portion, featuring a gas passage and a gas introduction space, which reduces the relative permittivity to suppress discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a plug is provided in the gas passage portion to suppress discharge, then discharge suppression is improved, but the relative permittivity increases which may affect voltage control
Solution Approach 1:
The plug is designed with non-uniform porosity distribution, having a first porous portion with higher porosity and a second porous portion with lower porosity. This local quality variation allows different regions of the plug to serve different functions: the higher porosity region suppresses discharge more effectively, while the lower porosity region controls the overall relative permittivity to maintain proper voltage distribution in the gas passage portion.
Solution Approach 2:
The plug functions as a composite structure combining regions of different porosity within the same component. This composite approach enables simultaneous optimization of discharge suppression (through higher porosity regions) and electrical property control (through lower porosity regions), resolving the contradiction between these two requirements.
2Reliability
If the plug is made entirely porous to suppress discharge, then discharge suppression is improved, but gas flow resistance increases
Solution Approach 1:
The plug employs local quality variation with a first porous portion having higher porosity for discharge suppression and a second porous portion having lower porosity for reduced gas flow resistance. This spatial differentiation allows the plug to simultaneously achieve effective discharge suppression in the gas passage portion while maintaining adequate gas flow characteristics.
Solution Approach 2:
The invention utilizes porous materials with controlled porosity distribution rather than uniform porosity. The first porous portion uses higher porosity to intercept electrons and suppress discharge, while the second porous portion uses lower porosity to minimize resistance to gas flow, thereby resolving the contradiction between discharge suppression and gas flow rate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively suppresses discharge between the wafer and the base plate, enhancing the reliability and safety of semiconductor manufacturing processes.
Implementation Method 1
If there is a plug, it suppresses the discharge because the electrons hit the plug before colliding with other gas molecules.
Implementation Method 2
The first porous portion has a porosity higher than a porosity of the second porous portion
Data Source
AI summary
A member for a semiconductor manufacturing equipment, comprising: a dielectric substrate having an upper surface and an opposed lower surface, a plug placement hole vertically penetrating the substrate, a plug embedded in the plug placement hole and having upper and lower surfaces, a conductive base plate bonded to the lower surface of the substrate via a bonding layer, and a gas supply path passing through the base plate and the bonding layer to supply gas to the plug. The plug is composed of a dielectric material and includes a dense portion, a gas passage that has a relative permittivity lower than that of the dense portion and that penetrates the plug to allow the gas to flow, and a voltage drop promoting portion that has a lower relative permittivity than that of the dense portion and that does not constitute a passage for the gas to flow.