Interlayer Dielectric Recess for Low-Capacitance Connection Lines
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in manufacturing highly integrated and high-speed semiconductor devices due to reduced process margins in exposure processes for fine pattern definition, and there is a need for advanced packaging techniques that enable high-density chip stacking while maintaining electrical integrity.
Innovation Solution
A semiconductor device design featuring a substrate with a first interlayer dielectric layer that includes a recess exposing the top surface of a conductive pattern, with a barrier pattern between the conductive pattern and the dielectric layer, and a method involving the formation of lower connection lines through a sacrificial layer and subsequent replacement with the interlayer dielectric, allowing for improved electrical connectivity and reduced parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional interlayer dielectric structure is used without a recess, then the manufacturing process is simpler, but parasitic capacitance increases and electrical characteristics deteriorate
Solution Approach 1:
The interlayer dielectric layer is segmented by forming a recess that divides it into two portions: a first portion covering the lower connection line and a second portion exposed by the recess. This segmentation reduces the overlap area between the conductive pattern and the dielectric layer, thereby reducing parasitic capacitance while maintaining the overall structural integrity through the barrier pattern and liner components.
2Object-generated harmful factors
If the interlayer dielectric layer completely covers the conductive pattern, then the structure is more complete, but electrical shorts may occur and parasitic capacitance increases
Solution Approach 1:
The interlayer dielectric layer is applied with different coverage qualities at different locations: the first portion fully covers the lower connection line for insulation, while the second portion is selectively removed by the recess to expose the conductive pattern top surface. This local differentiation reduces parasitic capacitance and prevents electrical shorts while maintaining manufacturing precision through the barrier pattern and liner that define the exposure boundaries.
3Reliability
If a barrier pattern is added between the conductive pattern and dielectric layer, then electrical integrity is improved, but the manufacturing process becomes more complex
Solution Approach 1:
A barrier pattern is introduced as an intermediary layer between the conductive pattern and the interlayer dielectric layer. This barrier pattern prevents direct contact and potential electrical shorts while the liner serves as another intermediary layer providing additional insulation and structural support. These intermediary layers improve electrical integrity and can be integrated into existing manufacturing processes using standard deposition and etching techniques.
Data Source
AI summary
A semiconductor device includes a substrate including an active pattern, a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer including a recess on an upper portion thereof, and a lower connection line in the first interlayer dielectric layer, the lower connection line being electrically connected to the active pattern, and the lower connection line including a conductive pattern, the recess of the first interlayer dielectric layer selectively exposing a top surface of the conductive pattern, and a barrier pattern between the conductive pattern and the first interlayer dielectric layer, the first interlayer dielectric layer covering a top surface of the barrier pattern.