Interlayer Dielectric Recess Structure for Low-Capacitance Connections
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Solution Overview
Problem
The increasing demand for high integration and high-speed semiconductor devices poses challenges in manufacturing due to reduced process margins in exposure processes for defining fine patterns, and existing packaging techniques struggle to achieve high-density chip stacking while maintaining electrical integrity.
Innovation Solution
A semiconductor device design that includes a substrate with an active pattern, a first interlayer dielectric layer with a recess exposing the top surface of a conductive pattern, and a barrier pattern between the conductive pattern and the dielectric layer, along with a method of manufacturing that involves forming sacrificial layers, capping patterns, and selectively removing these to create the necessary recesses and connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional packaging techniques are used, then manufacturing process is simple, but high-density chip stacking cannot be achieved
Solution Approach 1:
The patent transitions from planar packaging to three-dimensional vertical stacking by forming connection lines that extend through multiple interlayer dielectric layers. The conductive patterns are arranged in different vertical levels (first, second, and third connection lines at different heights), enabling high-density chip stacking by utilizing the vertical dimension rather than only horizontal expansion.
Solution Approach 2:
The packaging structure is divided into multiple functional segments including separate interlayer dielectric layers (first, second, third), distinct connection line layers, and isolated conductive patterns. This segmentation allows independent optimization of each layer for electrical connectivity and mechanical support, achieving high-density stacking while maintaining manufacturability through modular construction.
2Quantity of substance
If fine patterns are defined for high integration, then integration density increases, but process margin in exposure process decreases
Solution Approach 1:
The patent applies different pattern densities and complexities to different regions of the device. The conductive patterns are selectively formed in specific locations within the interlayer dielectric layers, with varying levels of detail and complexity. This local differentiation allows high integration density in critical areas while maintaining sufficient process margins in less critical regions, optimizing both integration and manufacturability.
3Reliability
If connection lines are fully embedded in dielectric layer, then electrical isolation is improved, but parasitic capacitance increases
Solution Approach 1:
The patent extracts portions of the connection lines from complete embedding in the dielectric material. The conductive patterns are partially exposed at specific locations where they form interfaces with adjacent layers, rather than being fully surrounded by dielectric material. This partial extraction reduces the dielectric volume surrounding the conductors, thereby reducing parasitic capacitance while maintaining sufficient electrical isolation through the remaining dielectric structures.
Data Source
AI summary
A semiconductor device includes a substrate including an active pattern, a first interlayer dielectric layer on the substrate, the first interlayer dielectric layer including a recess on an upper portion thereof, and a lower connection line in the first interlayer dielectric layer, the lower connection line being electrically connected to the active pattern, and the lower connection line including a conductive pattern, the recess of the first interlayer dielectric layer selectively exposing a top surface of the conductive pattern, and a barrier pattern between the conductive pattern and the first interlayer dielectric layer, the first interlayer dielectric layer covering a top surface of the barrier pattern.