Selective Dielectric Removal Using Frequency-Tuned Dielectric Heating
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Solution Overview
Problem
The challenge in selective etching of semiconductor structures is achieving high etching selectivity to remove a selected element while preserving the remaining elements intact, particularly in dielectric materials like silicon oxide and silicon nitride.
Innovation Solution
Applying an alternating electric field with a selected frequency to selectively heat the dielectric material, utilizing its maximum loss tangent frequency to achieve higher temperatures than other elements, and using a ligand exchange reaction to remove the heated dielectric material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective etching methods are used to remove selected dielectric material, then etching selectivity can be achieved, but etching efficiency and removal rate are insufficient
Solution Approach 1:
The patent applies electromagnetic radiation with a selected frequency to selectively heat the dielectric material, changing its temperature parameter to enhance the etching reaction rate. By controlling the frequency and intensity of electromagnetic radiation, the method achieves both high selectivity and improved etching efficiency simultaneously
Solution Approach 2:
The patent employs periodic application of electromagnetic radiation in cycles, alternating between heating phases and etching phases. This periodic action allows controlled thermal enhancement of etching while maintaining material selectivity, resolving the contradiction between etching speed and selectivity
2Productivity
If higher etching rates are achieved by increasing energy input, then productivity improves, but damage to the semiconductor structure increases
Solution Approach 1:
The patent uses electromagnetic radiation to selectively heat only the dielectric material at the etching location, creating a localized high-temperature zone. This local quality change enables faster etching at the target area without heating or damaging the surrounding semiconductor structure, thus improving removal rate while minimizing harmful effects
Solution Approach 2:
The patent introduces electromagnetic radiation as an intermediary energy carrier that selectively interacts with the dielectric material through its dielectric loss properties. This intermediary enables energy transfer specifically to the target material without directly heating or damaging other structure components, achieving high removal rates with minimal damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables efficient and selective removal of the dielectric material while minimizing damage to the semiconductor structure by ensuring the selected element is heated to a higher temperature, enhancing the reaction rate and selectivity of the etching process.
Implementation Method 1
applying an alternating electric field with a selected frequency to selectively heat the dielectric material, utilizing its maximum loss tangent frequency to achieve higher temperatures than other elements
Implementation Method 2
using a ligand exchange reaction to remove the heated dielectric material
Data Source
AI summary
A method for treating a semiconductor structure includes: disposing the semiconductor structure in a chamber; introducing a modifying agent into the chamber to modify a surface part of a dielectric element; and introducing a removing agent into the chamber while applying an electromagnetic radiation with a selected frequency to the chamber so as to permit the dielectric element to be selectively heated by the electromagnetic radiation to have a temperature higher than those of other elements of the semiconductor structure, and so as to permit the modified surface part of the dielectric element to be removed.