Gap-Filling Dielectric Seam Elimination via Surface Modification
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Solution Overview
Problem
In semiconductor manufacturing, gap-filling processes using dielectric materials often result in seams, especially in high aspect ratio gaps, leading to defects like copper out-diffusion, germanium segregation, and current leakage.
Innovation Solution
A method involving the introduction of a surface modification agent into the seam of a dielectric layer, followed by an energy field application to react and bond the surface portions, eliminating the seam and reducing thermal budget, thereby minimizing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dielectric layer is filled in a gap using conventional gap-filling processes, then the gap is filled with insulating material, but seams are formed in the dielectric layer leading to defects
Solution Approach 1:
The method introduces a surface modification agent into the seam before final bonding, performing preliminary chemical modification of the seam surfaces. This preliminary action prepares the surfaces for subsequent bonding by creating reactive functional groups, thereby preventing seam formation defects before they occur
Solution Approach 2:
The surface modification agent acts as an intermediary substance that facilitates bonding between the two dielectric layer surfaces. By introducing this intermediate agent that creates functional groups, the method enables seamless bonding without direct contact between original surfaces, eliminating seams
2Strength
If a high thermal budget process is used to bond dielectric layers, then bonding strength is improved, but defects like copper out-diffusion and germanium segregation increase
Solution Approach 1:
The method changes the bonding parameters by using low thermal budget conditions combined with surface modification agents. Instead of relying solely on high temperature for bonding, the invention modifies the chemical state of surfaces and uses reduced thermal energy conditions, thereby achieving bonding without causing thermal-related defects
Solution Approach 2:
The method replaces the conventional thermal-mechanical bonding approach with a chemical-bonding approach. By introducing surface modification agents that create functional groups for chemical bonding, the invention substitutes thermal-mechanical bonding with chemical bonding, eliminating the need for high thermal budget processes
3Ease of manufacture
If conventional gap-filling processes are used for high aspect ratio gaps, then the filling process is simplified, but seams are formed leading to current leakage
Solution Approach 1:
The surface modification agent serves as an intermediary that enables seamless filling of high aspect ratio gaps. By introducing this agent that facilitates chemical bonding at the seam interface, the method achieves defect-free filling without complicating the overall manufacturing process
Solution Approach 2:
The method extracts and removes the harmful seam structure from the dielectric layer by introducing surface modification agents that prevent seam formation. By taking out the seam defect through chemical modification and bonding, the invention achieves seamless filling while maintaining process simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a seamless dielectric layer with reduced defects and improved performance by eliminating seams and lowering the thermal budget in semiconductor devices.
Implementation Method 1
introducing a surface modification agent into the seam such that each of the two surface portions has first functional groups and second functional groups
Implementation Method 2
applying an energy field to permit the two surface portions to bond with each other through reaction between the first functional groups and the second functional groups
Data Source
AI summary
A method for filling a gap includes: filling a dielectric layer in the gap so that a seam is formed in the dielectric layer, the dielectric layer including two surface portions at two opposite sides of the seam, respectively; introducing a surface modification agent into the seam such that each of the two surface portions has first functional groups and second functional groups; forming a stress layer on the dielectric layer to cover the seam, the stress layer including a material different from that of the dielectric layer; and applying an energy field to permit the two surface portions to bond with each other through reaction between the first functional groups and the second functional groups.