Dielectric Material Segmentation for Semiconductor Chip Interconnects

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Solution Overview

Problem

The challenge is to develop smaller electronic devices with increased functionality while maintaining or improving performance in demanding environments, such as those in the automotive industry, where space is limited and devices must operate efficiently under various conditions.

Innovation Solution

The solution involves manufacturing semiconductor chips with a vertical structure and using a method that includes applying a dielectric material, creating recesses, and depositing a paste with sintered metal particles to form interconnect elements and external contact pads, allowing for increased packaging density and thermal conductivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If chips are attached to each other with a dielectric material to increase packaging density, then the device size is reduced and functionality is increased, but the thermal management capability deteriorates due to the insulating nature of dielectric materials

Engineering Contradiction:
Improvedevice sizeVSAvoidthermal management capability
Core Design Contradiction:
Volume of moving objectVSTemperature

Solution Approach 1:

The dielectric material layer is segmented into multiple regions: a first region with lower dielectric constant for general insulation, and a second region with higher thermal conductivity specifically for heat dissipation pathways. This segmentation allows simultaneous optimization of electrical insulation and thermal management in different spatial zones.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the dielectric material are assigned different material properties: the first region prioritizes electrical insulation with lower dielectric constant, while the second region prioritizes thermal conduction with higher thermal conductivity. This local differentiation resolves the contradiction between electrical function and thermal management.

Inventive Principle:
Principle #3Local quality

2Reliability

If a dielectric material with low dielectric constant is used to reduce capacitance between chips, then signal integrity is improved, but thermal conductivity deteriorates due to the insulating properties of low-k materials

Engineering Contradiction:
Improvesignal integrityVSAvoidthermal conductivity
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The dielectric material is divided into functionally distinct regions: a first region optimized for electrical performance with lower dielectric constant to minimize capacitance, and a second region optimized for thermal performance with higher thermal conductivity. This spatial segmentation allows both electrical and thermal requirements to be satisfied simultaneously.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dielectric material structure functions as a composite system where different material regions with contrasting properties are combined: low-k material for electrical insulation and high-thermal-conductivity material for heat dissipation. This composite approach resolves the inherent trade-off between electrical and thermal properties.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the creation of compact, high-functionality electronic devices with improved thermal management and electrical connectivity, addressing the need for reduced size and enhanced performance in constrained spaces.

Implementation Method 1

depositing a paste with sintered metal particles to form interconnect elements and external contact pads

Methodology Applied
Scientific EffectSintering: Sintering

Implementation Method 2

applying a dielectric material, creating recesses

Methodology Applied
Scientific EffectDielectric insulation: Dielectric

Data Source

PatentUS7767495B2Method for the fabrication of semiconductor devices including attaching chips to each other with a dielectric material
Publication Date: 2010.08.03 INFINEON TECHNOLOGIES AG
  • US7767495B2 patent drawing
  • US7767495B2 patent drawing
  • US7767495B2 patent drawing

AI summary

A semiconductor device and manufacturing method. One embodiment provides at least two semiconductor chips. A dielectric material is applied to the at least two semiconductor chips to attach the at least two semiconductor chips to each other. A portion of the dielectric material is selectively removed between the at least two semiconductor chips to form at least one recess in the dielectric material. Metal particles including paste is applied to the at least one recess in the dielectric material.