Dielectric Skeleton Structure for Ultra-Thin Semiconductor Singulation
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Solution Overview
Problem
The production and separation of thin and ultra-thin semiconductor dies are challenging due to susceptibility to damage during sawing and singulation, and conventional techniques involving handle substrates are costly and slow.
Innovation Solution
A dielectric skeleton structure is formed within a semiconductor wafer to provide mechanical support and stabilization during thinning, allowing for singulation by cutting through the skeleton rather than the semiconductor material, thereby reducing chipping and cracking, and minimizing new tooling requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional handle substrate technique is used to support thin wafers during production, then mechanical protection is improved, but manufacturing cost and production time increase
Solution Approach 1:
The patent removes the handle substrate entirely from the process. Instead of using a separate handle substrate for mechanical support, the method forms support structures directly within the wafer itself during the thinning process, eliminating the need for substrate attachment and subsequent removal steps.
Solution Approach 2:
The patent introduces sacrificial material as an intermediary substance that provides mechanical support during thinning. This material is deposited into trenches formed in the wafer, providing internal support without requiring external handle substrates. The sacrificial material is later removed after thinning is complete.
2Strength
If conventional handle substrate technique is used to support thin wafers during production, then mechanical protection is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent eliminates the handle substrate step entirely, removing the complexity of attaching wafers to substrates, performing thinning operations, and then separating the wafer from the substrate. This simplifies the manufacturing process while maintaining mechanical protection through internally-formed support structures.
Solution Approach 2:
The wafer provides its own mechanical support through internally-formed structures. The support structures are created directly within the wafer material itself, eliminating the need for external handle substrates and reducing manufacturing complexity.
3Device complexity
If thin wafer singulation is performed without internal support structures, then process simplicity is maintained, but wafer damage increases
Solution Approach 1:
The patent performs preliminary actions by forming support structures and trenches within the wafer before the thinning and singulation processes. This internal support is established in advance, preventing wafer damage during subsequent handling and cutting operations without adding external complexity.
Solution Approach 2:
The support structures are nested within the wafer itself, with trenches and sacrificial material embedded in the wafer's internal structure. This internal nesting provides mechanical support without adding external components or increasing process complexity.
Data Source
AI summary
In one implementation, a method for forming ultra-thin semiconductor components includes fabricating multiple devices including a first device and a second device in a semiconductor wafer, and forming a street trench within the semiconductor wafer and between the first and second devices. The method continues with forming a dielectric skeleton structure over the semiconductor wafer, the dielectric skeleton structure laterally extending to at least partially cover the first and second devices, while also substantially filling the street trench. The method continues with thinning the semiconductor wafer from a backside to expose the dielectric skeleton structure in the street trench to form a first ultra-thin semiconductor component having the first device, and a second ultra-thin semiconductor component having the second device. The method can conclude with cutting through the dielectric skeleton structure to singulate the first and second ultra-thin semiconductor components.