Semiconductor Dielectric Stack With Adhesion Layer Against AlN Peeling

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Solution Overview

Problem

The peeling issue between aluminum nitride and silicon nitride layers in semiconductor devices leads to device thickness increase and reduced density, as existing solutions like increasing the aluminum nitride layer thickness are not optimal.

Innovation Solution

An adhesion enhancement layer, typically made of oxygen-rich silicon oxide, is formed between the silicon nitride and aluminum nitride layers to absorb strain caused by oxidation, thereby suppressing peeling and maintaining device thickness and density.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the thickness of the aluminum nitride layer is increased to address peeling, then the peeling resistance is improved, but the overall device thickness increases and device density decreases

Engineering Contradiction:

Improvepeeling resistanceVSAvoiddevice thickness

Core Design Contradiction:

ReliabilityVSLength of stationary object

Solution Approach 1:

The aluminum nitride layer is divided into multiple sub-layers with different thicknesses. The first aluminum nitride layer has a greater thickness than the second aluminum nitride layer, creating a gradient structure that distributes stress more effectively and prevents peeling while maintaining overall thinness and high device density.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the aluminum nitride structure have different thicknesses tailored to local stress requirements. The first aluminum nitride layer (closer to the silicon nitride contact etch stop layer) has greater thickness to provide enhanced peeling resistance at the critical interface, while the second aluminum nitride layer has reduced thickness to minimize overall device thickness.

Inventive Principle:

Principle #3Local quality

2Strength

If the thickness of the aluminum nitride layer is increased to prevent peeling, then the adhesion strength is improved, but the device density decreases

Engineering Contradiction:

Improveadhesion strengthVSAvoiddevice density

Core Design Contradiction:

StrengthVSQuantity of substance

Solution Approach 1:

The aluminum nitride layer is segmented into two sub-layers with different thicknesses, allowing the structure to achieve high adhesion strength through the thicker first layer while maintaining high device density through the thinner second layer and overall optimized total thickness.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The adhesion strength is enhanced locally at the critical interface between the silicon nitride contact etch stop layer and the aluminum nitride structure by providing a thicker first aluminum nitride layer, while the overall device density is maintained through the reduced thickness of the second aluminum nitride layer.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The adhesion enhancement layer effectively reduces peeling and maintains device yield by absorbing strain during oxidation, ensuring the integrity of the semiconductor device structure without increasing thickness.

Implementation Method 1

an adhesion enhancement layer, typically made of oxygen-rich silicon oxide, is formed between the silicon nitride and aluminum nitride layers to absorb strain caused by oxidation

Methodology Applied

Scientific EffectStrain absorption: Absorption (physical)

Data Source

PatentUS12148656B2Method of manufacturing semiconductor device and semiconductor devices

Publication Date: 2024.11.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

In a method of manufacturing a semiconductor device, a first dielectric layer is formed over a substrate, an adhesion enhancement layer is formed on a surface of the first dielectric layer, and a second dielectric layer is formed on the adhesion enhancement layer.