Dielectric Layer Stack Coating for Semiconductor Field Isolation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face premature failure due to high electric field strengths caused by voltage differences between components, leading to accelerated aging and potential electrical discharges, which existing insulation methods fail to adequately address.
Innovation Solution
A semiconductor device with a layer stack comprising dielectric layers and an electrically conductive coating between the carrier and semiconductor chip, which reduces electric field strengths by forming capacitors that control the electric field distribution, and a dielectric structure with elevations to lengthen the creepage path, thereby preventing wear and discharges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional insulation methods are used between carrier and semiconductor chip, then galvanic isolation is achieved, but high electric field strengths cause accelerated aging and premature failure
Solution Approach 1:
A dielectric layer is introduced as an intermediary between the semiconductor chip and carrier. This dielectric layer, with its specific permittivity, acts as a mediator that controls and reduces the electric field strength in the insulation region, preventing direct high-field exposure that causes aging and failure while maintaining galvanic isolation.
Solution Approach 2:
The patent changes the electrical parameters of the insulation structure by selecting a dielectric material with specific permittivity characteristics. This parameter change modifies the electric field distribution, reducing peak field strengths without compromising the galvanic isolation function, thereby extending device lifetime.
2Object-affected harmful factors
If voltage differences between busbar and sensor chip are reduced, then electric field strengths decrease, but device functionality and measurement precision are compromised
Solution Approach 1:
The dielectric layer is applied locally in specific regions where high electric field strengths occur, such as at edges and corners between the busbar and sensor chip. This localized treatment reduces harmful field concentrations without altering the overall voltage differences needed for sensor functionality and measurement precision.
Solution Approach 2:
The dielectric layer serves as a local intermediary that modifies electric field distribution in critical regions. It allows the voltage differences necessary for sensor operation to be maintained while preventing excessive field strengths from developing at specific high-stress locations, thus preserving both functionality and precision.
3Object-affected harmful factors
If insulation distance between semiconductor chip and carrier is increased, then electric field strengths are reduced, but device compactness and integration density decrease
Solution Approach 1:
Instead of increasing the physical insulation distance, the patent changes the electrical parameters of the existing insulation structure by introducing a dielectric layer with optimized permittivity. This allows equivalent electric field reduction with smaller dimensional changes, maintaining device compactness while reducing harmful field strengths.
Solution Approach 2:
The patent replaces the mechanical approach of increasing insulation distance with an electrical field control approach using dielectric materials. This substitution achieves the same protective effect against high electric fields without the dimensional penalty, preserving device integration density and compact form factor.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces electric field strengths, preventing premature aging and failures, while ensuring safe operation and compliance with industry insulation standards, thus extending the device's lifetime and reducing resource consumption.
Implementation Method 1
reduces electric field strengths by forming capacitors that control the electric field distribution
Implementation Method 2
a layer stack arranged between the carrier and the semiconductor chip and including a plurality of dielectric layers
Data Source
AI summary
A semiconductor device contains an electrically conductive carrier and a semiconductor chip arranged on the carrier. Furthermore, the semiconductor device contains a layer stack arranged between the carrier and the semiconductor chip and having a plurality of dielectric layers. The layer stack galvanically isolates the semiconductor chip and the carrier from one another. At least one of the plurality of dielectric layers is coated with an electrically conductive coating.