Semiconductor Dielectric Stack with Removable Etch Stops
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Solution Overview
Problem
The complexity of manufacturing and integration in semiconductor devices leads to deficiencies, necessitating improvements in the manufacturing process to address increased complexity and integration challenges.
Innovation Solution
A semiconductor device structure with multiple stacked dielectric layers and energy removable structures, where the energy removable structures are used as etch stops during the etching process to form openings with varying aspect ratios, allowing for easier etching and improving performance, reliability, and yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If traditional etching processes are used without energy removable structures, then the manufacturing process is simpler, but the aspect ratio differences between openings become larger making etching more difficult
Solution Approach 1:
The energy removable structure serves as an intermediary etch stop layer between the first dielectric layer and the conductor. This intermediary structure enables precise control of the opening aspect ratio by providing a defined etching termination point, thereby facilitating easier etching while maintaining manufacturing precision.
Solution Approach 2:
The energy removable structure is formed in advance within the first dielectric layer before the etching process. This preliminary action establishes the etch stop position beforehand, allowing subsequent etching operations to achieve consistent aspect ratios without requiring complex real-time control.
2Manufacturing precision
If multiple dielectric layers and energy removable structures are added, then etching control is improved, but the device structure becomes more complex
Solution Approach 1:
The etch stop function is extracted as a separate, removable energy removable structure from the main dielectric layers. This allows the structure to perform its critical function during manufacturing while being easily removable afterward, thus improving precision without permanently increasing device complexity.
Solution Approach 2:
The energy removable structure is temporarily introduced to enable precise etching, then completely removed after serving its purpose. This approach allows the structure to aid manufacturing precision while leaving no permanent trace, thereby avoiding long-term complexity in the final device.
3Ease of operation
If energy removable structures are used to reduce aspect ratio differences, then etching ease is improved, but additional manufacturing steps are required
Solution Approach 1:
The mechanical etching process is augmented with energy-based removal of the energy removable structure. This substitution allows for easier etching control while the removal process can be efficiently performed using energy-based methods rather than traditional mechanical means, minimizing the impact on productivity.
Solution Approach 2:
The energy removable structure utilizes phase transitions (such as thermal decomposition or phase change from solid to gas/liquid) for its removal. This allows the structure to be easily eliminated after serving its etch stop function, converting a potentially time-consuming removal process into an efficient phase-based transition.
Data Source
AI summary
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a first energy removable structure disposed in the first dielectric layer. The semiconductor device structure also includes a second dielectric layer disposed over the first dielectric layer, and an Nth dielectric layer disposed over the second dielectric layer. The N is an integer greater than 2. The semiconductor device structure further includes a first conductor disposed in the Nth dielectric layer, and an (N+1)th dielectric layer disposed over the Nth dielectric layer. A top surface of the first conductor is exposed by a first opening, and a top surface of the first energy removable structure is exposed by a second opening.