Dielectric Stress Modulation for IC Package Warpage Reduction

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Integrated circuit packages experience warpage due to material differences, leading to non-bond issues and circuit failures as conductive features fail to bond properly.

Innovation Solution

Implement stress modulation layers and regions through ion implantation to modify the warpage profile of package components, using stress modulation dopants like Ge, B, P, As, Ga, or combinations, to reduce warpage and ensure proper bonding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If package components are bonded together to increase functionality and integration level, then the integration level and functionality are improved, but warpage occurs due to material differences causing non-bond issues and circuit failure

Engineering Contradiction:

Improvefunctionality and integration levelVSAvoidbonding reliability

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies preliminary anti-action by performing ion implantation on package components before bonding to induce stress that counteracts the warpage caused by material differences during bonding. This pre-applied counter-stress prevents warpage-related bonding failures, allowing high-integration packaging while maintaining bonding reliability.

Inventive Principle:

Principle #9Preliminary anti-action

Solution Approach 2:

The patent changes the physical-chemical parameters of the package component by implanting ions (such as boron, phosphorus, or antimony) into the substrate to modify its stress characteristics. This parameter change alters the warpage behavior of the component, enabling successful bonding despite material mismatches between different package components.

Inventive Principle:

Principle #35Parameter changes

2Reliability

If ion implantation is performed to reduce warpage, then bonding reliability is improved, but process complexity increases

Engineering Contradiction:

Improvebonding reliabilityVSAvoidprocess complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The ion implantation process is performed as a preliminary action before bonding to pre-condition the package component with appropriate stress characteristics. By completing the warpage compensation step beforehand, the subsequent bonding process becomes simpler and more reliable, as the warpage issue is already resolved.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent replaces mechanical warpage compensation methods (such as physical shaping or mechanical stress application) with ion implantation, which uses nuclear physics effects to induce stress. This substitution provides more precise and controllable stress modulation, reducing process variability and simplifying quality control.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The ion implantation process effectively reduces warpage, ensuring consistent bonding and preventing circuit failures by modifying the warpage profile to facilitate smoother integration of package components.

Implementation Method 1

performing an implantation process to implant the dielectric layer with a stress modulation dopant

Methodology Applied

Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS20250343162A1Warpage modulation through implantation and the structures thereof

Publication Date: 2025.11.06 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method includes depositing a dielectric layer on a package component having a first warpage, and performing an implantation process to implant the dielectric layer with a stress modulation dopant. After the implantation process, the package component has a second warpage smaller than the first warpage.