Semiconductor Structure With Dielectric TSV Heat Dissipation
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Solution Overview
Problem
The increasing functional density and decreasing geometry size in semiconductor integrated circuits lead to high heat density, resulting in electromigration and reliability issues due to poor thermal dissipation performance, which is exacerbated by parasitic capacitance and leakage paths caused by metal-based through-silicon vias (TSVs).
Innovation Solution
The use of metal-free dielectric TSVs with higher thermal conductivity than the substrate to act as a heat sink, improving heat dissipation by discharging heat from circuit hotspots and preventing parasitic capacitance, thereby enhancing the performance of the IC structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal-based through-silicon vias (TSVs) are used to improve electrical connectivity, then electrical conductivity is improved, but parasitic capacitance and leakage paths increase
Solution Approach 1:
The patent extracts the harmful metal material from the TSV structure and replaces it with a dielectric material. This removal of metal eliminates the source of parasitic capacitance and leakage paths while maintaining the TSV's structural function for thermal dissipation and electrical isolation.
Solution Approach 2:
The patent introduces a dielectric material as an intermediary substance to fill the TSV. This dielectric material serves as a mediator that provides electrical isolation (preventing leakage paths) and thermal conduction (dissipating heat), replacing the dual electrical/thermal function of metal TSVs without the harmful electrical side effects.
2Productivity
If functional density is increased and geometry size is decreased to improve production efficiency, then productivity is improved, but heat density increases causing poor thermal dissipation
Solution Approach 1:
The patent applies local quality by creating high thermal conductivity regions specifically at the TSV locations where heat generation is most intense. The dielectric TSVs provide localized thermal management solutions at hotspots without affecting the overall device geometry or functional density.
Solution Approach 2:
The patent utilizes materials with high thermal conductivity (such as diamond or diamond-like carbon with thermal conductivity >150 W/m/K) to create thermal pathways that conduct heat away from dense circuit regions, effectively managing thermal expansion and heat accumulation in high-density configurations.
3Temperature
If dielectric TSVs with high thermal conductivity are used to improve thermal dissipation, then temperature control is improved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the material parameter of the TSV from metal to dielectric material with high thermal conductivity. This parameter change enables simultaneous achievement of electrical isolation and thermal conduction, simplifying the overall device architecture by eliminating the need for separate thermal management structures.
Solution Approach 2:
The dielectric TSV structure serves multiple functions simultaneously: it provides electrical isolation (preventing leakage paths), thermal conduction (dissipating heat from hotspots), and structural support. This multi-functionality reduces manufacturing complexity by consolidating multiple requirements into a single structural element.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of dielectric TSVs with thermal conductivity greater than 150 W/m/K effectively reduces temperature and prevents additional leakage paths, improving the thermal dissipation and overall performance of semiconductor structures.
Implementation Method 1
dielectric TSVs with higher thermal conductivity than the substrate to act as a heat sink, improving heat dissipation by discharging heat from circuit hotspots
Implementation Method 2
preventing parasitic capacitance, thereby enhancing the performance of the IC structure
Data Source
AI summary
A method includes forming a semiconductor device over a front-side of a substrate, the semiconductor device comprising a channel region, a gate structure across the channel region, and source/drain regions on the channel region and at opposite sides of the gate structure; forming a first source/drain contact on a first one of the source/drain regions; forming a front-side interconnect structure over the first source/drain contact; forming a first dielectric through-silicon via extending through the substrate from a cross-sectional view, the first dielectric through-silicon via overlapping the first source/drain contact from a top view; forming a back-side interconnect structure over a back-side of the substrate, wherein the first dielectric through-silicon via has a back-side surface in contact with the back-side interconnect structure.