Dielectric Vias for Substrate-Integrated Devices
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Solution Overview
Problem
Conventional metallic vias in electronic circuits suffer from high loss, especially at microwave frequencies, and the metallizing process is time-consuming and costly.
Innovation Solution
A substrate-integrated device with dielectric vias, where the via-holes are filled with a dielectric material having a higher dielectric constant than the substrate, utilizing perovskite oxide materials like Barium Titanate or Lead ZirconateTitanate, to reduce losses and simplify the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If metallic vias are used for electrical connection between layers, then electrical connectivity is achieved, but energy loss increases especially at microwave frequencies
Solution Approach 1:
The patent replaces metallic vias with dielectric vias filled with high dielectric constant material. This substitution eliminates the conductive path through metal while maintaining electrical connectivity through the substrate, thereby reducing energy loss especially at microwave frequencies while preserving the essential electrical connection function.
Solution Approach 2:
The patent changes the dielectric constant parameter by filling via-holes with material having a dielectric constant at least two times larger than the substrate material. This parameter change enables effective confinement of electromagnetic fields within the via structure, reducing radiation loss and improving signal integrity without requiring metallic construction.
2Reliability
If metallizing process is used to create metallic vias, then electrical connectivity is achieved, but manufacturing time and cost increase
Solution Approach 1:
The patent extracts the metallizing step from the via formation process. By using dielectric vias instead of metallic vias, the complex metallization procedures (such as electroplating, electroless plating, or sputtering) are eliminated, significantly reducing manufacturing time and cost while maintaining the essential function of electrical connection and field confinement.
3Reliability
If metallizing process is used to create metallic vias, then electrical connectivity is achieved, but manufacturing cost increases
Solution Approach 1:
The patent extracts the metallizing step from the via formation process. By using dielectric vias instead of metallic vias, the complex metallization procedures (such as electroplating, electroless plating, or sputtering) are eliminated, significantly reducing manufacturing time and cost while maintaining the essential function of electrical connection and field confinement.
Solution Approach 2:
The patent employs inexpensive dielectric materials to fill the via-holes, replacing expensive metallic materials and complex metallization processes. The dielectric material provides sufficient electrical connectivity and field confinement functionality at a lower cost, making the overall manufacturing process more economically viable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dielectric vias effectively confine and direct electromagnetic energy, reducing losses and enabling cost-effective, efficient operation at radio and microwave frequencies, while eliminating the need for high-temperature sintering and improving space efficiency in electronic devices.
Implementation Method 1
a dielectric material with a second dielectric constant contained within the via-hole. The second dielectric constant (relative permittivity) is larger than the first dielectric constant
Data Source
AI summary
A substrate-integrated device includes a substrate layer with a first dielectric constant and one or more dielectric vias, the one or more dielectric vias each includes a via-hole extending through the substrate layer, and a dielectric material with a second dielectric constant contained within the via-hole. The second dielectric constant is larger than, preferably at least two times, the first dielectric constant.