Dielectric Waveguide for High-Speed Chiplet Interconnects
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Solution Overview
Problem
High-speed links in the range of several hundred gigahertz to terahertz between circuit blocks or different dies in computing systems face challenges due to high metal losses and difficulties in controlling the thickness of interlayer dielectric materials in legacy waveguides.
Innovation Solution
The implementation of an on-chip waveguide network built on a semiconductor substrate with a low-loss high resistivity substrate, such as glass or silicon, which includes a waveguide material with a low loss tangent and metal coating or cladding, allowing for efficient high-speed data transfer between chips or circuit blocks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If metal interconnects are used for high-speed links at several hundred GHz to THz frequencies, then electrical connection is achieved, but metal losses become relatively high
Solution Approach 1:
The patent replaces metal interconnects with dielectric waveguides for signal transmission. The waveguide uses dielectric materials to guide electromagnetic waves instead of relying on metal conductors, thereby eliminating the primary source of metal losses at high frequencies while maintaining reliable signal transmission between chiplets.
Solution Approach 2:
The patent changes the transmission medium from conductive metal to dielectric material, fundamentally altering the physical parameter of the transmission path. This parameter change enables lower loss propagation at THz frequencies by utilizing the dielectric properties of the waveguide material rather than the resistive properties of metal interconnects.
2Manufacturing precision
If legacy organic or low-temperature co-fired ceramic waveguides are used, then waveguide functionality is achieved, but thickness control and manufacturing precision are difficult
Solution Approach 1:
The patent employs a composite structure consisting of a substrate, waveguide material layer, and metal coating or cladding. This composite material approach enables precise thickness control of the waveguide while maintaining manufacturability, as each layer can be independently optimized and fabricated using standard semiconductor processing techniques.
3Reliability
If on-chip waveguide network with low-loss substrate is implemented, then electrical performance is increased, but device complexity increases
Solution Approach 1:
The substrate serves multiple functions: it provides mechanical support, guides electromagnetic waves, and offers a platform for integrating chiplets. The waveguide structure is designed to be multi-functional, enabling both signal transmission and potential thermal management, thereby achieving high electrical performance without proportionally increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides better process tolerance, reduced thickness, increased electrical performance, and a more compact form factor, enabling high-bandwidth communication with lower losses compared to legacy organic or low-temperature co-fired ceramic waveguides.
Implementation Method 1
a waveguide launcher electromagnetically and physically coupled with the waveguide material, wherein the waveguide launcher is exposed at a side of the dielectric substrate
Implementation Method 2
a first chiplet of the plurality of chiplets to communicate with a second chiplet of the plurality of chiplets by a radio frequency (RF) signal that propagates through the on-chip dielectric waveguide
Data Source
AI summary
Embodiments may relate to a dielectric waveguide that includes a substrate and a waveguide material disposed within the substrate. The dielectric waveguide may further include a waveguide launcher electromagnetically and physically coupled with the waveguide material, wherein the waveguide launcher is exposed at a side of the dielectric substrate. Other embodiments may be described or claimed.