Dielectric Window Protection Structure for High-Density Plasma Etching
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Solution Overview
Problem
High-density plasma in substrate treating processes causes excessive etching of dielectric windows, leading to process defects due to continuous collisions with high energy ions and charged particles, which damages the protection layer and exposes the lower surface of the dielectric window.
Innovation Solution
A substrate treating apparatus with a dielectric window featuring a bulged high etching area protection layer and an etch resistor protruding into the process space, which provides additional protection against plasma damage by distributing high energy ions and particles uniformly, reducing exposure and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high density plasma is used to increase process efficiency, then productivity is improved, but the dielectric window is etched away more intensively causing process defects
Solution Approach 1:
An etch resistor is formed on the lower surface of the dielectric window before the plasma process begins. This etch resistor serves as a sacrificial layer that absorbs plasma etching damage, preventing direct contact between the plasma and the dielectric window body, thereby protecting the window while allowing high density plasma processing to proceed
Solution Approach 2:
The etch resistor acts as an intermediary layer between the plasma and the dielectric window. It mediates the harmful interaction by being selectively etched by the plasma, thus protecting the main dielectric window structure from damage while enabling high density plasma processing
2Productivity
If higher plasma density is applied, then process efficiency increases, but process defects increase due to dielectric window etching
Solution Approach 1:
The etch resistor is pre-formed on the dielectric window surface before plasma processing. This preliminary protective structure enables the use of high density plasma without causing window damage that would lead to process defects, thus maintaining both high productivity and manufacturing precision
Solution Approach 2:
The etch resistor is designed as a consumable, sacrificial layer that is intentionally made to be etched away by the plasma. This disposable protective layer absorbs the damage that would otherwise affect the dielectric window and cause process defects, enabling high density plasma processing with low defect rates
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes plasma damage to the dielectric window, reducing process defects and contamination by distributing high energy ions and particles uniformly, thereby protecting the window from excessive etching and maintaining process integrity.
Implementation Method 1
an antenna may be arranged on the dielectric window. A high frequency power may be applied to the antenna and an electric field may be generated in the process space by an inductive coupling effect
Implementation Method 2
higher energy ions and charged particles of the high density plasma continuously collide with the dielectric window along a profile of the antenna by a self-bias effect
Data Source
AI summary
A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.