Memory Controller DIF Transformation for Storage Efficiency

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Solution Overview

Problem

Existing memory devices face challenges in increasing storage efficiency, lifespan, and reliability of non-volatile memories.

Innovation Solution

The implementation of a memory device with a memory controller that receives data integrity field (DIF) information from a host, generates second DIF information with a different structure, and writes it to the non-volatile memory, thereby optimizing storage efficiency and reliability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If first DIF information including CRC information is written to non-volatile memory, then data integrity verification is ensured, but storage efficiency is reduced due to increased space requirements

Engineering Contradiction:
Improvedata integrity verificationVSAvoidstorage space
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

The patent transforms the DIF information from its original format (first DIF with CRC) into a different format (second DIF) that occupies less storage space while maintaining data integrity verification capability. This parameter change in the data structure enables reduced storage requirements without sacrificing reliability.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent extracts and separates the essential integrity verification components from the original DIF information, creating a streamlined second DIF structure that retains only the necessary elements for verification while removing redundant data, thereby reducing storage space requirements.

Inventive Principle:
Principle #2Taking out (Extraction)

2Reliability

If more space is allocated for CRC information, then data integrity is improved, but space available for ECC data is reduced

Engineering Contradiction:
Improvedata integrityVSAvoidspace for ECC data
Core Design Contradiction:
ReliabilityVSQuantity of substance

Solution Approach 1:

By changing the structure and format of the DIF information to the second DIF, the patent optimizes the allocation of storage space, allowing for expanded ECC data capacity while preserving sufficient integrity verification capability through the transformed DIF structure.

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If first DIF information is stored as-is, then data structure simplicity is maintained, but storage efficiency and lifespan are reduced

Engineering Contradiction:
Improvedata structureVSAvoidstorage efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent applies parameter changes to the DIF information structure, transforming it into a more efficient format that improves storage efficiency and extends memory lifespan while the memory controller manages the transformation process to maintain overall system simplicity.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The memory controller acts as an intermediary that handles the transformation from first DIF to second DIF, shielding the host from complexity while enabling storage efficiency improvements. This mediator approach maintains ease of operation for the host system.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12204409B2Memory devices
Publication Date: 2025.01.21 SAMSUNG ELECTRONICS CO LTD
  • US12204409B2 patent drawing
  • US12204409B2 patent drawing
  • US12204409B2 patent drawing

AI summary

A memory device includes a non-volatile memory and a memory controller for writing data received from a host to the non-volatile memory. The memory controller is configured to receive, from the host, first data integrity field (DIF) information associated with the data, the first DIF information including individual cyclic redundancy check (CRC) information generated based on the data; generate, based on the first DIF information, second DIF information having a structure that is different from a structure of the first DIF information; and write the second DIF information to the non-volatile memory.