Different-Size ESD Diodes for Low-Capacitance I/O Protection

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Solution Overview

Problem

Existing ESD protection designs in semiconductor devices face a trade-off between reducing capacitance to minimize signal loss and maintaining effective protection against electrostatic discharge, as smaller diodes with lower capacitance can lead to higher clamping voltages and current leakage, potentially damaging internal circuits.

Innovation Solution

Implementing diodes with different sizes in parallel, coupled with silicon-controlled rectifiers, to create multiple discharge paths that reduce overall capacitance while preventing current leakage and ensuring effective ESD protection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If diode size is reduced to decrease capacitance, then signal loss is minimized, but clamping voltage increases and current leakage occurs

Engineering Contradiction:
Improvesignal lossVSAvoidESD protection effectiveness
Core Design Contradiction:
Loss of energyVSReliability

Solution Approach 1:

The patent segments the ESD protection function into multiple diodes with different sizes rather than using a single diode. This segmentation allows the system to achieve lower overall capacitance while maintaining effective ESD protection through the combined action of multiple diodes with optimized individual characteristics.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent applies local quality by assigning different sizes (and thus different capacitance values) to different diodes within the ESD protection circuit. Each diode is locally optimized with specific dimensions to contribute differently to the overall protection mechanism, allowing the system to balance capacitance reduction with protection effectiveness.

Inventive Principle:
Principle #3Local quality

2Productivity

If diode size is reduced to decrease capacitance, then integration density is improved, but protection capability deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidESD protection capability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The ESD protection circuit is segmented into multiple diodes with different sizes, allowing better space utilization and integration density while maintaining protection capability through the collective function of all diodes.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the physical parameters (size, capacitance) of individual diodes to optimize the overall system performance. By varying diode parameters across the array, the system achieves both high integration density and effective ESD protection capability.

Inventive Principle:
Principle #35Parameter changes

3Loss of information

If single diode size is optimized for low capacitance, then signal integrity is improved, but ESD protection becomes insufficient

Engineering Contradiction:
Improvesignal integrityVSAvoidcurrent leakage
Core Design Contradiction:
Loss of informationVSObject-affected harmful factors

Solution Approach 1:

The protection function is segmented across multiple diodes, where each diode handles a portion of the ESD current while contributing to overall signal integrity through its optimized capacitance value.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The ESD protection circuit uses a composite structure of multiple diodes with different characteristics, creating a system that combines the advantages of various diode sizes to simultaneously protect against current leakage and maintain signal integrity.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution achieves a decrease in capacitance by up to 30% without compromising ESD protection, thereby minimizing signal loss and preventing damage to internal circuits during electrostatic discharge events.

Implementation Method 1

Electrostatic discharge diodes with different sizes and methods of manufacturing thereof

Methodology Applied
Scientific EffectElectrostatic discharge: Electrostatic Discharge

Data Source

PatentUS20250344513A1Electrostatic discharge diodes with different sizes and methods of manufacturing thereof
Publication Date: 2025.11.06 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250344513A1 patent drawing
  • US20250344513A1 patent drawing
  • US20250344513A1 patent drawing

AI summary

A semiconductor device includes a first diode having a first cathode and a first anode, wherein the first cathode is floating. The semiconductor device includes a second diode having a second cathode and a second anode, wherein the first anode is coupled to the second anode with the second cathode connected to a first supply voltage. The semiconductor device includes a third diode having a third cathode and a third anode, wherein the third cathode is connected to the first anode at an input/output pin, with the third anode connected to a second supply voltage. The second anode is coupled to a circuit that is powered by the first supply voltage and the second supply voltage. The first diode has a first size and the second diode has a second size, and the first size is substantially greater than the second size.