Differential Amplifier Shield Electrode Layout for EMI Immunity

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Solution Overview

Problem

Semiconductor devices that input differential signals require improved electromagnetic interference (EMI) immunity to prevent noise and malfunction caused by external electromagnetic waves.

Innovation Solution

A semiconductor device with a shield electrode on its main surface, fixed to ground potential, concealing the device region, and a semiconductor chip with a demarcated constant current and input regions, enhancing EMI immunity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a differential amplifier circuit is used to amplify differential signals, then signal amplification capability is improved, but electromagnetic interference immunity deteriorates due to susceptibility to external electromagnetic waves

Engineering Contradiction:
Improvesignal amplification capabilityVSAvoidelectromagnetic interference immunity
Core Design Contradiction:
PowerVSObject-affected harmful factors

Solution Approach 1:

A shield electrode is introduced as an intermediary element between the differential amplifier circuit and external electromagnetic waves. The shield electrode, connected to ground potential, acts as a mediator that intercepts and redirects electromagnetic interference away from the sensitive amplifier circuit, thereby protecting it without affecting the signal amplification function

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The shield electrode converts the harmful effect of electromagnetic waves into a beneficial grounding effect. By providing a low-impedance path to ground, the shield electrode directs electromagnetic interference away from the amplifier circuit and dissipates it safely through the ground connection, transforming a potential harm into a protective mechanism

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Object-affected harmful factors

If the semiconductor chip area is increased to accommodate additional EMI protection structures, then electromagnetic interference immunity is improved, but chip area increases

Engineering Contradiction:
Improveelectromagnetic interference immunityVSAvoidchip area
Core Design Contradiction:
Object-affected harmful factorsVSArea of stationary object

Solution Approach 1:

The shield electrode is positioned in a vertical dimension above or below the differential amplifier circuit on the chip surface, rather than expanding the horizontal footprint. This three-dimensional arrangement provides EMI protection while maintaining a compact chip area, as the shield operates in the vertical space above/below the circuit rather than requiring additional lateral space

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The shield electrode and ground potential configuration significantly enhance the device's resistance to electromagnetic interference, improving signal integrity and reducing noise-related malfunctions.

Implementation Method 1

a shield electrode that is arranged on the main surface such as to conceal the device region in a plan view and that is fixed to a ground potential

Methodology Applied
Scientific EffectElectromagnetic shielding: Faraday Cage

Data Source

PatentUS12512418B2Semiconductor device
Publication Date: 2025.12.30 ROHM CO LTD
  • US12512418B2 patent drawing
  • US12512418B2 patent drawing
  • US12512418B2 patent drawing

AI summary

A semiconductor device includes a semiconductor chip that has a main surface, a device region that is demarcated at the main surface, a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input to the differential amplifier, an insulation layer that covers the device region on the main surface, and a shield electrode that is incorporated in the insulation layer such as to conceal the device region in a plan view and that is fixed to a ground potential.