Differential Clock Correction Circuit for Stable Memory Timing

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Solution Overview

Problem

Existing semiconductor devices face challenges in generating an internal differential clock with proper duty cycle correction for high-speed data transfer in semiconductor memory systems, leading to potential data errors due to duty cycle distortion and unstable intermediate node potentials.

Innovation Solution

Incorporating pull-up and pull-down circuits in the cross point correction circuit to stabilize intermediate nodes and generate differential clocks with corrected cross points, ensuring appropriate duty cycle and reducing warm-up cycles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If duty cycle correction is implemented in existing semiconductor devices, then data transfer reliability is improved, but circuit complexity increases and warm-up cycles are required

Engineering Contradiction:
Improvedata transfer reliabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the duty cycle correction function with the existing clock generation circuitry by integrating pull-up and pull-down circuits into the differential clock generation path. This merging approach enables duty cycle correction without adding completely separate correction circuits, thereby improving reliability while limiting the increase in overall device complexity.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The pull-up and pull-down circuits automatically adjust the clock edges to achieve proper duty cycle without requiring external control signals or warm-up cycles. The circuits self-regulate the clock waveform by actively pulling nodes to appropriate voltage levels, eliminating the need for preliminary warming periods and reducing operational complexity.

Inventive Principle:
Principle #25Self-service

2Stability of the object's composition

If pull-up and pull-down circuits are added to stabilize intermediate nodes, then clock signal stability is improved, but power consumption increases

Engineering Contradiction:
Improveintermediate node stabilityVSAvoidpower consumption
Core Design Contradiction:
Stability of the object's compositionVSUse of energy by moving object

Solution Approach 1:

The pull-up and pull-down circuits operate in a periodic manner, activating only during critical transitions of the clock signal rather than continuously. This periodic operation stabilizes intermediate nodes during essential clock edges while minimizing power consumption by keeping the circuits inactive during stable periods, thus achieving node stability without excessive energy usage.

Inventive Principle:
Principle #19Periodic action

3Manufacturing precision

If cross point correction is implemented, then duty cycle accuracy is improved, but device area increases

Engineering Contradiction:
Improveduty cycle accuracyVSAvoiddevice area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent applies cross point correction locally at specific intermediate nodes within the differential clock generation circuit rather than throughout the entire device. By targeting only the critical nodes that affect duty cycle accuracy and inserting pull-up/pull-down circuits at these localized positions, the design achieves improved duty cycle precision while minimizing the overall device area increase.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10762937B2Semiconductor device and memory system
Publication Date: 2020.09.01 KIOXIA CORP
  • US10762937B2 patent drawing
  • US10762937B2 patent drawing
  • US10762937B2 patent drawing

AI summary

According to one embodiment, in a semiconductor device, the first pull-up circuit is connected to a third node and to a fourth node. The third node is a node between a drain of the first transistor with a first conductivity type and a source of the second transistor with the first conductivity type. The fourth node is a node between a drain of the third transistor with the first conductivity type, and a source of the fourth transistor with the first conductivity type and a source of the fifth transistor with the first conductivity type. The first pull-down circuit is connected to a fifth node and to a sixth node. The fifth node is a node between a drain of the first transistor with a second conductivity type and a source of the second transistor with the second conductivity type. The sixth node is a node between a drain of the third transistor with the second conductivity type and a source of the fourth transistor with the second conductivity type and a source of the fifth transistor with the second conductivity type.