Differential Voltage Detection Circuit for Near-Zero and Bipolar Inputs

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Solution Overview

Problem

Existing voltage detection circuits struggle to accurately detect a wide range of voltages, including both positive and negative voltages, while minimizing leakage current, particularly when detecting lithium-ion battery voltages between 0 V to 5 V, and may suffer from indeterminate operation near 0 V.

Innovation Solution

A fully differential voltage detection circuit with a selector comprising two MOS transistors in series, one with a normal threshold and one with a low threshold, and a capacitance couple drive unit, allowing for accurate detection of a wide voltage range by controlling the on and off states of switches using drive capacitors and selection signals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a conventional voltage detection circuit is used, then the circuit structure is simple, but the detection accuracy deteriorates when detecting voltages near 0 V and leakage current increases

Engineering Contradiction:
Improvedetection accuracyVSAvoidleakage current
Core Design Contradiction:
Measurement precisionVSObject-generated harmful factors

Solution Approach 1:

The selector is divided into multiple selection units, each handling specific voltage ranges. This segmentation allows each unit to be optimized for its specific range, improving overall detection accuracy while controlling leakage current through specialized low-threshold transistors in each unit.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the threshold voltage parameter of MOS transistors by using both normal-threshold and low-threshold transistors in the selection units. This parameter variation enables accurate detection near 0 V by selecting appropriate transistor threshold characteristics for different voltage ranges, while minimizing leakage current through the low-threshold design.

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If a selector with normal MOS transistors is used, then the device complexity is low, but the adaptability to wide voltage ranges deteriorates

Engineering Contradiction:
Improvevoltage range detection capabilityVSAvoidcircuit complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The selector is segmented into multiple selection units with different transistor threshold characteristics. This segmentation enables the circuit to adapt to wide voltage ranges by activating appropriate units based on the input voltage level, while keeping each individual unit relatively simple in structure.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The selection units are designed to handle multiple voltage ranges by incorporating both normal-threshold and low-threshold MOS transistors. This multi-functionality allows the same basic unit structure to operate across different voltage conditions, improving adaptability without proportionally increasing complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Measurement precision

If the selector uses only normal MOS transistors, then the manufacturing process is simple, but the detection accuracy near 0 V deteriorates

Engineering Contradiction:
Improvedetection accuracy near 0 VVSAvoidmanufacturing process complexity
Core Design Contradiction:
Measurement precisionVSEase of manufacture

Solution Approach 1:

The patent introduces low-threshold MOS transistors with modified threshold voltage parameters to improve detection accuracy near 0 V. These special transistors are integrated into specific selection units, allowing high-precision detection in critical voltage ranges while maintaining standard manufacturing processes for the overall circuit.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

Low-threshold MOS transistors are selectively applied only in selection units where high-precision detection near 0 V is required, rather than throughout the entire circuit. This local quality approach improves detection accuracy where needed while keeping the rest of the manufacturing process simple and standardized.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The circuit achieves accurate detection of both positive and negative voltages without leakage current, maintaining detection accuracy and expanding the input range, suitable for applications like battery monitoring ICs that require wide voltage detection.

Implementation Method 1

a capacitance couple drive unit that includes: a drive capacitor; and a drive unit that generates a drive signal for driving a gate of the at least one MOS transistor and supplies the drive signal to the gate of the at least one MOS transistor, and controls an on and off state of each of the plurality of switches by driving the gate of the at least one MOS transistor via the drive capacitor

Methodology Applied
Scientific EffectCapacitance: Capacitance

Data Source

PatentUS20260110714A1Voltage detection circuit
Publication Date: 2026.04.23 DENSO CORP
  • US20260110714A1 patent drawing
  • US20260110714A1 patent drawing
  • US20260110714A1 patent drawing

AI summary

A voltage detection circuit includes: switches each of which includes a MOS transistor capable of opening and closing between a pair of input nodes and a pair of output nodes; a capacitance couple drive unit having a drive unit; and a selector that is connected between the pair of input nodes, selects one of voltages of the pair of input nodes, and outputs a selection signal having a potential corresponding to a selected voltage. The drive unit generates the drive signal using the potential of the selection signal as a reference potential. The selector includes two MOS transistors connected in series between the pair of input nodes. One of the two MOS transistors is a normal MOS transistor having a normal threshold voltage. An other of the two MOS transistors is a low-threshold MOS transistor having a threshold lower than the normal threshold.