Diffraction Overlay Recipe Feedback for Alignment Mark Accuracy
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Solution Overview
Problem
Current diffraction-based process recipes for semiconductor manufacturing are not precise enough, leading to deviations in the position of overlay marks and affecting the reliability of evaluating alignment precision.
Innovation Solution
A method for generating a diffraction-based process recipe involves providing a basic process recipe with parameters like exposure wavelength and energy, forming an initial alignment pattern, and performing feedback correction steps to adjust the basic process recipe and obtain an actual process recipe, which improves the precision of the overlay pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a diffraction-based process recipe is used to generate overlay marks, then the overlay precision can be evaluated, but the position of the overlay mark deviates from design due to insufficient precision
Solution Approach 1:
The patent implements a feedback correction mechanism where the actual process recipe is determined by comparing the developed pattern with the etched pattern, and using the difference between them to correct the basic process recipe. This closed-loop feedback approach iteratively improves the accuracy of overlay mark positioning while maintaining the ability to evaluate overlay precision.
Solution Approach 2:
The patent adjusts process parameters (exposure wavelength, exposure energy, development conditions, etching conditions) to optimize the alignment between developed and etched patterns. By systematically varying these parameters and observing the pattern differences, the method achieves more accurate overlay mark positioning without sacrificing measurement capability.
2Reliability
If the overlay precision requirement is stringent to ensure device function, then the reliability of product increases, but the manufacturing complexity and difficulty increase
Solution Approach 1:
The feedback correction mechanism automatically adjusts process parameters based on pattern comparison, reducing the need for manual intervention and complex process control. The system self-corrects to achieve the required overlay precision, thereby maintaining reliability while managing complexity through automation.
Solution Approach 2:
The process recipe generates its own correction data through the comparison of developed and etched patterns. The system uses its own output (pattern differences) to improve its own performance (overlay mark accuracy), reducing external complexity and enabling autonomous optimization for reliable device manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The improved diffraction-based process recipe enhances the precision of overlay patterns, leading to more reliable evaluation of alignment precision and increased yield in semiconductor manufacturing.
Implementation Method 1
Generally, the overlay marks are generated by a diffraction-based process recipe
Data Source
AI summary
Embodiments of the present disclosure relate to the field of semiconductors, and provide a process recipe, a method and a system for generating same, and a semiconductor manufacturing method. The method for generating a diffraction-based process recipe includes: providing a basic process recipe, the basic process recipe is used to form an initial alignment pattern; and performing a feedback correction step for at least one time to adjust the basic process recipe and obtain an actual process recipe, which each time includes: obtaining a first pattern and a second pattern based on the basic process recipe prior to a current feedback correction step, the first pattern is the initial alignment pattern that is developed, the second pattern is the initial alignment pattern that is etched; and adjusting the basic process recipe prior to the current feedback correction step based on a difference between the first pattern and the second pattern.