Diffusing Agent Composition for Semiconductor Impurity Layers
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Solution Overview
Problem
Conventional diffusing agents used for forming N-type impurity diffusion layers in semiconductor substrates face challenges in storage stability and diffusibility when high concentrations of solid components are required for ink-jet patterning, leading to rapid condensation reactions and film thickness issues.
Innovation Solution
A diffusing agent composition containing a condensation product from alkoxysilane and a phosphate impurity diffusion component, which maintains stability even at high concentrations, enabling sufficient film thickness and improved diffusibility into semiconductor substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the concentration of solid component in the painting solution is made high to obtain sufficient painted film thickness, then the film thickness is improved, but the condensing reaction progresses rapidly and storage stability is remarkably deteriorated
Solution Approach 1:
The patent changes the chemical parameters of the painting solution by using specific organic solvents (ether, ester, or ketone) and controlling the concentration of phosphorus-containing compound within 1-50 wt% to achieve optimal balance between film thickness and storage stability
Solution Approach 2:
The patent creates a composite painting solution system combining phosphorus-containing compound with specific condensation products and organic solvents, where the synergistic interaction between components maintains stability even at high solid component concentrations
2Device complexity
If the ink-jet method is used to pattern the semiconductor substrate surface, then the process complexity is reduced and liquid usage is decreased, but sufficient painted film thickness cannot be obtained unless high solid component concentration is used
Solution Approach 1:
The patent optimizes the concentration parameter of solid components in the painting solution to be within 1-50 wt%, which is high enough to provide sufficient film thickness for ink-jet patterning while maintaining solution stability
3Quantity of substance
If phosphorus pentaoxide is used as the source for supplying phosphorus, then the impurity diffusion component is provided, but rapid condensation reaction occurs at high concentrations and storage stability is deteriorated
Solution Approach 1:
The patent changes the chemical form of phosphorus from phosphorus pentaoxide to phosphorus-containing compounds that can be supplied as esters or salts, which maintain stability at high concentrations while still providing adequate phosphorus supply for diffusion
Solution Approach 2:
The patent introduces organic solvents (ether, ester, or ketone) as intermediary substances that stabilize the phosphorus-containing compound in the painting solution, preventing rapid condensation reactions while allowing high concentration formulation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enhances storage stability and diffusibility of the impurity diffusion component into semiconductor substrates, ensuring effective formation of impurity diffusion layers while maintaining film thickness and reducing process costs.
Implementation Method 1
The regions are heated to a high temperature to cause the diffusing agent to diffuse into the regions, thereby forming an N-type impurity diffusion layer
Implementation Method 2
a dehydration condensed product based on an Si compound is contained in the diffusing agent, the condensing reaction will progress rapidly
Data Source
AI summary
A diffusing agent composition including a condensation product and an impurity diffusion component. The condensation product is a reaction product resulting from hydrolysis of an alkoxysilane. The impurity diffusion component is a monoester or diester of phosphoric acid, or a mixture thereof.